S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
More filters
Journal ArticleDOI
Cl2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn
K. B. Jung,Hyun Cho,Y. B. Hahn,David C. Hays,T. Feng,Y.D Park,J.R. Childress,Stephen J. Pearton +7 more
TL;DR: In this article, thin films of CoFeB, CoSm, CoZr and FeMn have been etched in inductively coupled plasma Cl 2 discharges with He, Ar or Xe as the inert gas additive as an additional physical component to the etch process.
Patent
Oxygen and carbon dioxide sensing
Fan Ren,Stephen J. Pearton +1 more
TL;DR: In this article, a high electron mobility transistor (HEMT) capable of performing as a CO 2 or O 2 sensor is disclosed, and a polymer solar cell can be connected to the HEMT for use in an infrared detection system.
Journal ArticleDOI
Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability
Li Liu,Chien-Fong Lo,Yuyin Xi,Fan Ren,Stephen J. Pearton,Oleg Laboutin,Yu Cao,J. Wayne Johnson,Ivan I. Kravchenko +8 more
TL;DR: In this article, a GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers were fabricated and their reliability compared.
Journal ArticleDOI
Transparent dual-gate InGaZnO thin film transistors: OR gate operation
Wantae Lim,Erica A. Douglas,Jaewon Lee,Junghun Jang,Valentin Craciun,David P. Norton,Stephen J. Pearton,Fan Ren,Soohyun Son,Junku Yuh,Hongen Shen,W. L. William Chang +11 more
TL;DR: Transparent dual-gate (DG) InGaZnO4 thin film transistors for OR logic operation were fabricated on a glass substrate in this article, where a 100nm-thick SiO2 layer used as both top and bottom gate dielectrics was deposited by plasma enhance chemical vapor deposition at 200°C.
Journal ArticleDOI
Dry etching of GaSb and InSb in
TL;DR: In this paper, the etch rates of both GaSb and InSb were obtained for both electron cyclotron resonance discharges in a wide range of plasma conditions (microwave power 400 - 1000 W, pressure 1.5 - 10 mTorr, to ratio 0.1 - 1.6).