S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
More filters
Journal ArticleDOI
Chloride ion detection by InN gated AlGaN∕GaN high electron mobility transistors
Byung Hwan Chu,Hon-Way Lin,Shangjr Gwo,Yu-Lin Wang,Stephen J. Pearton,Jerry W. Johnson,Pradeep Rajagopal,John C. Roberts,Edwin L. Piner,K. J. Linthicuni,Fan Ren +10 more
TL;DR: In this article, a real-time chloride ion detection using InN gated AlGaN∕GaN high electron mobility transistors (HEMTs) was demonstrated, where the InN thin film on the gate area of the HEMT provided fixed surface sites for reversible anion coordination.
Journal ArticleDOI
Electrical characteristics of GaN implanted with Si + at elevated temperatures
TL;DR: In this article, Si+ implantation at multiple ion energies (30-360keV) into GaN for n-type doping was carried out at substrate temperatures from 27 to 700°C, followed by annealing at 1150-1400°C for 5min.
Journal ArticleDOI
Pnp InGaAsN-based HBT with graded base doping
TL;DR: In this article, a grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT).
Journal ArticleDOI
Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst
J.Y. Chen,C. J. Pan,F. C. Tsao,Cheng-Huang Kuo,Gou-Chung Chi,B. J. Pong,Chih-Yang Chang,David P. Norton,Stephen J. Pearton +8 more
TL;DR: In this paper, ZnO nanowires were grown on Si (100) substrates with and without Au catalyst by chemical vapor deposition employing the vapor liquid solid (VLS) and vapor solid (VS) mechanisms, respectively.
Journal ArticleDOI
Damage introduction in GaAs/AlGaAs and InGaAs/InP heterojunction bipolar transistor structures during electron cyclotron resonance plasma processing
Fan Ren,T. R. Fullowan,Stephen J. Pearton,J. R. Lothian,R. Esagui,C. R. Abernathy,William S. Hobson +6 more
TL;DR: In this article, the threshold dc self-biases for discharges below which there is no significant damage introduction in the semiconductor were investigated in a low pressure hybrid electron cyclotron resonance-radio frequency reactor, where the biases are a function of the doping type, doping level and the thickness of the exposed III-V layers.