S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes
Wantae Lim,Hyun Kum,Youngjin Choi,Sung Hyun Sim,Ji Hye Yeon,Kim Jung Sub,Han Kyu Seong,Nam-Goo Cha,Yong-Il Kim,Youngsoo Park,Geonwook Yoo,Stephen J. Pearton +11 more
TL;DR: In this paper, the SiO2 nanoholes were realized on a 2'μm-thick n+GaN template by a two-step dry etching process, and the use of C4F8/O2/Ar plasma chemistries under the low pressure was found to greatly enlarge the bottom diameter of each hole, exhibiting high aspect ratio (AR) and vertical etch profile (∼89°).
Journal ArticleDOI
Diffusion-Controlled Selective Wet Etching of ZnCdO over ZnO
Jau-Jiun Chen,Fan Ren,David P. Norton,Stephen J. Pearton,Andrei Osinsky,J. W. Dong,S. N. G. Chu +6 more
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Simulation of vertical and lateral ZnO light-emitting diodes
Soohwan Jang,J. J. Chen,Fan Ren,Hyucksoo Yang,Sang Youn Han,David P. Norton,Stephen J. Pearton +6 more
TL;DR: In this article, the effect of active, n-and p-layer dopings and thicknesses on the optical output intensity and currentvoltage characteristics of both vertical and lateral geometry ZnO LEDs was examined.
Journal ArticleDOI
On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors
Eugene B. Yakimov,Eugene B. Yakimov,Alexander Y. Polyakov,Ivan Shchemerov,N. B. Smirnov,A. A. Vasilev,A. I. Kochkova,P. S. Vergeles,E. E. Yakimov,A. V. Chernykh,Minghan Xian,Fan Ren,Stephen J. Pearton +12 more
TL;DR: In this article, the authors showed that the capture of photoinduced or electron-beam-induced holes by the deep acceptors gives rise to a decrease in the effective Schottky barrier height and an increase of the electron current flow that is responsible for the observed high gain.
Journal ArticleDOI
Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors
Chien-Fong Lo,Li Liu,Tsung-Sheng Kang,Fan Ren,O. Laboutin,Yu Cao,Jerry W. Johnson,Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,I. A. Belogorokhov,A. I. Belogorokhov,Stephen J. Pearton +12 more
TL;DR: In this article, AlGaN/GaN high electron mobility transistors (HEMTs) with similar active layers structures were grown on SiC or sapphire substrates using different buffer layer structures.