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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Metastable centers in AlGaN/AlN/GaN heterostructures
Alexander Y. Polyakov,Nick B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,Stephen J. Pearton,Fan Ren,S. Yu. Karpov,Kirill D. Shcherbachev,N. G. Kolin,Wantae Lim +9 more
TL;DR: A set of AlGaN/AlN/GaN high electron mobility transistor structures with Al composition changing from 20% Al to 50% Al was grown by metalorganic chemical vapor deposition on sapphire.
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1.6 A GaN Schottky rectifiers on bulk GaN substrates
Jerry W. Johnson,B. Lou,Fan Ren,D. Palmer,Stephen J. Pearton,Sang-Yong Park,Yong Jo Park,J.-I. Chyi +7 more
TL;DR: In this paper, a large area bulk GaN rectifier with implanted p+ guard rings was fabricated using additional dielectric overlap passivation to avoid self-heating at large operating currents.
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Tungsten metallization for stable and self-aligned InP-based laser devices
TL;DR: In this article, tungsten thin films on n-InP layers were investigated for potential use as a refractory ohmic contact for self-aligned In-based etched mesa buried heterostructure laser devices.
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Improved breakdown of AlInAs/InGaAs heterojunction bipolar transistors
TL;DR: AlInAs/InGaAs heterojunction bipolar transistors exhibiting DC breakdown voltages, Vceo, in excess of 7 V are reported in this paper, where the layer structure uses a two-stage collector to achieve the high breakdown voltage.
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Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition
In Hwan Lee,Alexander Y. Polyakov,Nikolai B. Smirnov,Eugene B. Yakimov,Eugene B. Yakimov,S. A. Tarelkin,Andery V. Turutin,Ivan V. Shemerov,Stephen J. Pearton +8 more
TL;DR: For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS).