S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C
Minghan Xian,Chaker Fares,Fan Ren,Brent P. Gila,Yen Ting Chen,Yu-Te Liao,Marko J. Tadjer,Stephen J. Pearton +7 more
TL;DR: In this article, the electrical and structural properties of sputter-deposited W Schottky contacts with Au overlayers on n-type Ga2O3 are found to be basically stable up to 500 °C.
Journal ArticleDOI
Current relaxation analysis in AlGaN/GaN high electron mobility transistors
Alexander Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,In Hwan Lee,Taehoon Jang,Alexey A. Dorofeev,Nadezhda B. Gladysheva,Eugene S. Kondratyev,Yulia A. Turusova,R. A. Zinovyev,Andrei V. Turutin,Fan Ren,Stephen J. Pearton +12 more
TL;DR: In this article, the authors examined the possible origin of the relaxation time broadening, including the presence of disorder giving rise to extended exponential decays and to physical broadening of discrete levels into bands.
Journal ArticleDOI
Exponential diffusion profile for impurity trapping at an unsaturable trap.
TL;DR: Ces profils de profondeur exponentiels observe dans certains cas de diffusion de l'hydrogene dans des semiconducteurs peuvent s'expliquer en incluant un terme dans l'equation de diffusion.
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Effects of hydrogen implantation into GaN
Stephen J. Pearton,C. R. Abernathy,Robert G. Wilson,J. M. Zavada,C.Y. Song,M.G. Weinstein,Michael Stavola,J. Han,Randy J. Shul +8 more
TL;DR: In this article, proton implantation in GaN is found to reduce the free carrier density through two mechanisms: first, by creating electron and hole traps at around E C ǫ− 0.8 eV and E Vǫ+ 0.9 eV that lead to compensation in both n- and p-type material, and second, by leading to formation of (AH)° complexes, where A is any acceptor (Mg, Ca, Zn, Be, Cd).
Journal ArticleDOI
Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy
C. R. Abernathy,P. W. Wisk,Stephen J. Pearton,William Scott Hobson,P. H. Fuoss,F. J. Lamelas,S. N. G. Chu,Fan Ren +7 more
TL;DR: The thermal stability of GaAs(C)/InAs superlattices grown by metalorganic molecular beam epitaxy on InP substrates has been examined by Hall measurements, transmission electron microscopy, and high resolution x-ray diffraction as mentioned in this paper.