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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask
Alexander Y. Polyakov,A. V. Markov,M. V. Mezhennyi,A. V. Govorkov,V. F. Pavlov,N. B. Smirnov,A. A. Donskov,L. I. D’yakonov,Yu. P. Kozlova,S. S. Malakhov,T. G. Yugova,V. I. Osinsky,G. G. Gorokh,N. N. Lyahova,V. B. Mityukhlyaev,Stephen J. Pearton +15 more
TL;DR: In this paper, GaN growth by hydride vapor phase technique on (100) Si substrates masked by porous Al anodic oxide is described, and the masks were prepared by vacuum deposition of Al with subsequent anodic oxidation in dilute sorrel acid.
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Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation
Alexander Y. Polyakov,N. M. Shmidt,N. B. Smirnov,Ivan Shchemerov,E. I. Shabunina,N. A. Tal'nishnih,P. B. Lagov,P. B. Lagov,Yu. S. Pavlov,L. A. Alexanyan,Stephen J. Pearton +10 more
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Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN
TL;DR: The use of a TiB 2 diffusion barrier for Ni/Au contacts on p-GaN is reported in this paper, where contact resistance measurements and auger electron spectroscopy (AES) are used.
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Long term stability of dry etched magnetoresistive random access memory elements
TL;DR: The magnetization of Cl2/Ar etched magnetic multilayer structures used in magnetoresistive random access memory elements was measured over a period of ∼6 months as mentioned in this paper.
Journal ArticleDOI
Magnetism in SiC implanted with high doses of Fe and Mn
Stephen J. Pearton,K. P. Lee,M. E. Overberg,C. R. Abernathy,Nikoleta Theodoropoulou,Arthur F. Hebard,Robert G. Wilson,S. N. G. Chu,J. M. Zavada +8 more
TL;DR: In this paper, high concentrations (0.1-5 at) of Mn or Fe were introduced into the near surface region (≤2000 A) of 6H-SiC substrates by direct implantation at 300°C.