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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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High density, low temperature dry etching in GaAs and InP device technology
TL;DR: In this paper, electron cyclotron resonance (ECR) plasma etching of GaAs, AlGaAs, and GaSb in Cl2/Ar or BCl3/Ar discharges is performed down to −30 C substrate temperature and characterized in terms of rate, anisotropy, damage introduction and near surface stoichiometry.
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Low-dimensional systems: Quantum wires and quantum boxes by MBE
TL;DR: In this paper, the authors used Ga+ ion implantation through e-beam written masks followed by rapid thermal annealing to define lines and boxes in MBE-grown GaAs quantum-well structures.
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Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas
Fan Ren,J. W. Lee,C. R. Abernathy,Stephen J. Pearton,C. Constantine,C. Barratt,Randy J. Shul +6 more
TL;DR: In this article, the effects of Ar plasma exposure on transconductance, channel sheet resistance, output resistance, and gate contact ideality factor of GaAs metal-semiconductor field effect transistors (MESFETs) were investigated using two different high-density plasma sources, namely inductively coupled plasma and electron resonance plasma.
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Characteristics of Be+ and O+ or H+ co‐implantation in GaAs/AlGaAs heterojunction bipolar transistor structures
Stephen J. Pearton,Fan Ren,P. W. Wisk,T. R. Fullowan,Rose Fasano Kopf,J. M. Kuo,William Scott Hobson,C. R. Abernathy +7 more
TL;DR: In this article, the simultaneous formation of buried external collector and extrinsic base regions in GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures by co-implantation of Be+ together with O+ or H+ ions is described.
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Sn doping of GaAs and AlGaAs grown by metalorganic molecular beam epitaxy
TL;DR: In this paper, the authors investigated Sn doping of GaAs and AlGaAs grown by metal-organic molecular beam epitaxy (MOMBE) by growing layers in which the Sn flux, as generated by an elemental Sn source, is periodically raised or lowered by changing the source temperature.