S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Electrical and structural analysis of high-dose Si implantation in GaN
John C. Zolper,Hark Hoe Tan,James Williams,Jin Zou,David J. H. Cockayne,Stephen J. Pearton,M. Hagerott Crawford,Robert F. Karlicek +7 more
TL;DR: It is found that Si implantation inGaN can achieve 50% activation at a dose of 1×1016 cm-2, despite significant residual damage after the 1100 °C activation anneal, which suggests that activation of implanted Si donors in GaN doses not require complete damage removal.
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Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
Jerry W. Johnson,A. P. Zhang,Wen-Ben Luo,Fan Ren,Stephen J. Pearton,Soon-oh Park,Yong Jo Park,J.-I. Chyi +7 more
TL;DR: Schottky rectifiers with implanted p/sup +/ guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices.
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High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering
Wantae Lim,S. Kim,Yu-Lin Wang,Jain Lee,David P. Norton,Stephen J. Pearton,Fan Ren,Ivan I. Kravchenko +7 more
TL;DR: In this article, a-IGZO-based thin-film transistors based on amorphous indium gallium zinc oxide were fabricated by radiofrequency magnetron sputtering on glass substrates.
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Magnetic and structural properties of Co, Cr, V ion-implanted GaN
TL;DR: In this paper, the magnetic and structural properties of epitaxial metal organic chemical vapor deposition grown p-GaN:Mg/Al2O3 implanted with Co, Cr, and V ions at varying high doses at 350°C were investigated after a short anneal at 700 °C to remove implantation damage.
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Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature
Sang-Yun Sung,Se-Yun Kim,Kwang-Min Jo,Joon-Hyung Lee,Jeong-Joo Kim,Sang Gon Kim,Kyoung-hoon Chai,Stephen J. Pearton,David P. Norton,Young-Woo Heo +9 more
TL;DR: In this article, the authors investigated the use of copper oxides for active layer of p-channel field effect transistors (TFTs) in a p-type enhancement mode with an on/off ratio of ∼104 and field effect mobility of 0.4 cm2/V⋅s.