S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
More filters
Journal ArticleDOI
Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices.
Travis J. Anderson,Fan Ren,Stephen J. Pearton,B. S. Kang,Hung-Ta Wang,Chih-Yang Chang,Jenshan Lin +6 more
TL;DR: ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module.
Journal ArticleDOI
Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO
Kelly P. Ip,Young-Woo Heo,Kwang Hyeon Baik,David P. Norton,Stephen J. Pearton,Suhyun Kim,Jeffrey R. LaRoche,Fan Ren +7 more
TL;DR: The Schottky barrier height of Pt contacts on n-type (n∼1016 cm−3) thin film ZnO deposited by pulsed laser deposition was obtained from current-voltage measurements as a function of temperature as discussed by the authors.
Journal ArticleDOI
Room temperature operation of submicrometre radius disk laser
TL;DR: In this article, an InGaAs/InGaAsP quantum well disk laser 0.8 μm in radius and 0.18 μm thick is operated at room temperature in the M = 5 whispering mode at wavelength λ = 1.542 μm using 0.85 μm optical pumping.
Journal ArticleDOI
Dry etch damage in InN, InGaN, and InAlN
TL;DR: In this article, changes in conductivity of InN, In0.5Ga, In 0.5N, and In0.,5Al layers exposed to Ar plasmas under both electron cyclotron resonance and reactive ion etching conditions were measured as a function of rf power, pressure, and exposure time.
Journal ArticleDOI
AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor
TL;DR: In this article, the characteristics of Sc2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) diodes as hydrogen gas sensors are reported.