S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Structure and vibrational properties of the dominant O-H center in β-Ga2O3
TL;DR: In this article, the authors carried out infrared absorption experiments on H- and D-doped β-Ga2O3 that involve temperature and polarization-dependent effects as well as relative H-and D-concentrations to probe the defect structures that hydrogen can form.
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The Promise and Perils of Wide‐Bandgap Semiconductor Nanowires for Sensing, Electronic, and Photonic Applications
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Low-voltage indium gallium zinc oxide thin film transistors on paper substrates
Wantae Lim,Erica A. Douglas,David P. Norton,Stephen J. Pearton,Fan Ren,Young-Woo Heo,S. Y. Son,Junku Yuh +7 more
TL;DR: In this paper, bottom-gate amorphous (α-) indium-gallium-zincoxide (InGaZnO4) thin film transistors were fabricated on both paper and glass substrates at low processing temperature.
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Electrical and structural changes in the near surface of reactively ion etched InP
TL;DR: In this article, a near surface modification in the net carrier concentration in n-type InP (n=6×1015-1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl•based (CCl2F2/O2) or organic•based discharges, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions.
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Hydrogenation of GaN, AlN, and InN
TL;DR: In this paper, the authors measured the hydrogen incorporation depths of 2H plasma exposure of GaN and AlN at 250-400°C for 30 min and found that the concentration of hydrogen incorporated is in the range 5 −10×1017 cm−3 for GaN, and 5 −30×1018 cm −3 for AlN under these conditions.