scispace - formally typeset
S

Stephen J. Pearton

Researcher at University of Florida

Publications -  1988
Citations -  62995

Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.

Papers
More filters
Journal ArticleDOI

Hydrogen injection and neutralization of boron acceptors in silicon boiled in water

A. J. Tavendale, +2 more
- 03 Mar 1986 - 
TL;DR: In this article, hydrogen injection and neutralization of boron acceptors are observed in p-type crystalline Si boiled in water, and the results were confirmed by secondary ion mass spectrometry depth profiling of deuterium.
Journal ArticleDOI

Ar+‐ion milling characteristics of III‐V nitrides

Stephen J. Pearton, +3 more
- 15 Jul 1994 - 
TL;DR: Ion milling of thin-film GaN, InN, AlN, and InGaN was performed with 100-500 eV Ar+ ions at beam angles of incidence ranging from 0° to 75° from normal incidence as mentioned in this paper.
Journal ArticleDOI

Effect of Gd Implantation on the Structural and Magnetic Properties of GaN and AlN

Sang Youn Han, +10 more
- 23 Jan 2006 - 
TL;DR: Gd+ ions were implanted at total doses of 3-6x10(14) cm(2) into single-crystal GaN or AlN epilayers grown on sapphire substrates and annealed at 700-1000 degrees C as mentioned in this paper.
Journal ArticleDOI

Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning

Kelly P. Ip, +10 more
- 04 Jun 2004 - 
TL;DR: In this paper, the Schottky barrier height of e-beam Pt contacts was 0.70eV, with ideality factor of 1.5 and a saturation current density of 6.2×10−6Acm−2.
Journal ArticleDOI

Electrical transport properties of single GaN and InN nanowires

Chih-Yang Chang, +6 more
- 01 Apr 2006 - 
TL;DR: In this paper, the transport properties of single GaN and InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of temperature, annealing condition (for GaN) and length/square of radius ratio (for InN).