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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitations.
TL;DR: The infrared spectra of acceptor-H centers in passivated Si for B, Al, and Ga provide evidence for an unexpected low-frequency excitation of the complexes as discussed by the authors.
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Dry etching of thin-film InN, AlN and GaN
Stephen J. Pearton,C. R. Abernathy,Fan Ren,James Robert Lothian,P. W. Wisk,Avishay Katz,C. Constantine +6 more
TL;DR: In this article, anisotropic dry etching of InN, AlN and GaN layers is demonstrated using low-pressure (1-30 mTorr) CH4/H2/Ar or Cl2/H 2 ECR discharges with additional DC biasing of the sample.
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Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching
TL;DR: In this paper, the authors demonstrated the thinning of exfoliated quasi-two-dimensional β-Ga2O3 flakes by using a reactive ion etching technique, achieving an etch rate of approximately 16'nm/min at a power of 200'W with a flow of 50 sccm of SF6.
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Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy
TL;DR: In this paper, hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy and the hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions.
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GaN n- and p-type Schottky diodes: Effect of dry etch damage
TL;DR: In this paper, the reverse breakdown voltage (V/sub B/) and forward turn-on voltage (v/sub F/) of n-and p-GaN Schottky diodes were examined to examine the effects of Cl/sub 2/Ar and Ar plasma damage.