S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors
Hung-Ta Wang,B. S. Kang,Fan Ren,Robert C. Fitch,J. K. Gillespie,Neil Moser,G. H. Jessen,T. Jenkins,R. Dettmer,D. Via,Antonio Crespo,Brent P. Gila,C. R. Abernathy,Stephen J. Pearton +13 more
TL;DR: In this article, a comparison of the changes in drain and gate currentvoltage characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change of gate current.
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Reactive ion etching of iii–v semiconductors
TL;DR: Anisotropic dry etching by a number of different techniques is widely employed in III-V compound semiconductor technology for pattern transfer, device isolation, mesa formation, grating fabrication and via hole etching as mentioned in this paper.
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Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas
J. W. Lee,M. W. Devre,B. H. Reelfs,D. Johnson,J. N. Sasserath,F. Clayton,David C. Hays,Stephen J. Pearton +7 more
TL;DR: In this article, a breakthrough for selective etching of GaAs over AlxGa1−xAs, x=0.2, layer with a high density plasma source was reported.
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Minority‐carrier‐enhanced reactivation of hydrogen‐passivated Mg in GaN
TL;DR: In this article, the influence of minority carrier injection on the reactivation of hydrogen passivated Mg in GaN at 175°C has been investigated in p−n junction diodes.
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Properties of highly Cr-doped AlN
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,R. M. Frazier,J. Y. Liefer,G. T. Thaler,C. R. Abernathy,Stephen J. Pearton,J. M. Zavada +8 more
TL;DR: In this paper, a single-phase, insulating AlCrN is produced whose band gap shows a small (0.1 − 0.2eV) decrease from the value for undoped AlN (6.2 eV), a decrease in aplane lattice constant and the introduction of two absorption bands at 3 and 5eV into the band gap.