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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Properties of titanium nitride thin films deposited by rapid‐thermal‐low‐pressure‐metalorganic‐chemical‐vapor‐deposition technique using tetrakis (dimethylamido) titanium precursor
Avishay Katz,A. Feingold,Stephen J. Pearton,S. Nakahara,M. Ellington,U. K. Chakrabarti,M. Geva,E. Lane +7 more
TL;DR: Titanium nitride (TiNx) thin films were deposited onto InP by means of the rapid thermal low pressure chemical vapor deposition (RT•LPMOCVD) technique, using the tetrakis (dimethylamido) titanium (Ti(NMe2)4 or DMATi) complex as the precursor as discussed by the authors.
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ZnO and Related Materials for Sensors and Light-Emitting Diodes
Stephen J. Pearton,Wantae Lim,J.S. Wright,Li-Chia Tien,H. S. Kim,David P. Norton,Hung-Ta Wang,B. S. Kang,Fan Ren,J. Jun,Jenshan Lin,Andrei Osinsky +11 more
TL;DR: In this paper, the fabrication of a number of ZnO thin-film and nanowire devices, including transistors, diodes, and UV and pH sensors, is discussed.
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Ti /Au n-type Ohmic contacts to bulk ZnO substrates
TL;DR: In this paper, the as-deposited specific contact resistivity on undoped (n∼1017cm−3) bulk ZnO substrates exhibited 3×10−4Ωcm2, regardless of the polarity (Zn face or O face) of the substrate.
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Experimental study of graphitic nanoribbon films for ammonia sensing
TL;DR: In this paper, the ammonia sensing properties of graphitic nanoribbon films consisting of multi-layer graphene nanorsibbons are investigated and the dependence of the sensing response on ammonia concentration and temperature is investigated.
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Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane
B. S. Kang,Jihyun Kim,Soohwan Jang,Fan Ren,Jerry W. Johnson,Robert Joseph Therrien,Pradeep Rajagopal,John C. Roberts,Edwin L. Piner,Kevin J. Linthicum,S. N. G. Chu,K.H. Baik,Brent P. Gila,C. R. Abernathy,Stephen J. Pearton +14 more
TL;DR: In this article, the capacitance of the channel of an AlGaN∕GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate was measured during the application of both tensile and compressive strain through changes in the ambient pressure.