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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Implant isolation of GaAs‐AlGaAs heterojunction bipolar transistor structures
Fan Ren,Stephen J. Pearton,William Scott Hobson,T. R. Fullowan,James Robert Lothian,A. W. Yanof +5 more
TL;DR: In this paper, the formation of high resistivity regions in GaAs-AlGaAs heterojunction bipolar transistor (HBT) structures by oxygen and hydrogen ion implantation has been investigated as a function of ion dose and subsequent annealing temperature.
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Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance
TL;DR: In this article, a modification of deep level transient spectroscopy which varies the measurement frequency from 10 kHz to 1 MHz and is based on commercially available inductance-capacitance-resistance meters and pulse generators was tested for GaN films and AlGaN/GaN high electron mobility transistor structures with various series resistances.
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Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN/GaN heterostructures
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,Stephen J. Pearton,N. G. Kolin,D. I. Merkurisov,V. M. Boiko +7 more
TL;DR: The effect of neutron irradiation on the electrical properties of undoped n-AlGaN∕GaN heterostructures is reported in this article, showing that the two-dimensional electron gas (2DEG) mobility starts to decrease at neutron doses above 1014 cm−2, while the 2DEG concentration slightly increases at low doses and decreases dramatically for doses higher than 2.5×1016cm−2.
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ICP etching of SiC
J. J. Wang,Eric Lambers,Stephen J. Pearton,Mikael Östling,Carl-Mikael Zetterling,J. M. Grow,Fan Ren,Randy J. Shul +7 more
TL;DR: A number of different plasma chemistries have been investigated for dry etching of 6H and 3C-SiC in an inductively coupl... as mentioned in this paper, including NF3/O2, SF6/O 2, SF 6/Ar, ICl, IBr, Cl2/ Ar, BCl3/Ar and CH4/H2/Ar.
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Ultraviolet photoluminescence from Gd-implanted AlN epilayers
John Zavada,Neeraj Nepal,Jingyu Lin,Hongxing Jiang,E. Brown,Uwe Hommerich,Jennifer K. Hite,G. T. Thaler,C. R. Abernathy,Stephen J. Pearton,Russell M. Gwilliam +10 more
TL;DR: In this article, a photoluminescence (PL) spectroscopy method was used to detect deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films using a quadrupled Ti:sapphire laser.