S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Ion implantation for isolation of III-V semiconductors
TL;DR: In this article, the use of ion bombardment for the creation of resistive layers in III-V semiconductors is reviewed, and two complementary methods to achieve the removal of free carriers in these materials are proposed.
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Ion implantation doping and isolation of GaN
TL;DR: In this paper, the activation energy of the deep states controlling the resistivity of implant-isolated materials is in the range 0.8-0.9 eV, which is applicable to the fabrication of a variety of different GaN-based electronic and photonic devices.
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Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods
Li-Chia Tien,P.W. Sadik,David P. Norton,Lars F. Voss,Stephen J. Pearton,Hung-Ta Wang,B. S. Kang,Fan Ren,J. Jun,Jenshan Lin +9 more
TL;DR: In this article, a comparison of the sensitivities for detecting hydrogen with Pt-coated single ZnO nanorods and thin films of various thicknesses (20-350 nm) was made.
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GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
Stephen J. Pearton,B. S. Kang,Suku Kim,Fan Ren,Brent P. Gila,C. R. Abernathy,Jenshan Lin,S N G Chu +7 more
TL;DR: In this article, the authors discuss the advances in use of GaN-based solid-state sensors for these applications and discuss their potential for a wide range of chemical, gas, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications.
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Magnetic and structural properties of Mn-implanted GaN
Nikoleta Theodoropoulou,Arthur F. Hebard,M. E. Overberg,Cammy R. Abernathy,Stephen J. Pearton,S. N. G. Chu,Robert G. Wilson +6 more
TL;DR: In this paper, high doses (1015−5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350°C and annealed at 700−1000°C.