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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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InGaP/GaAs based single and double heterojunction bipolar transistors grown by MOMBE
TL;DR: In this paper, carbon-doped InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source metal organic molecular beam epitaxy (MOMBE) are reported.
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Dielectric passivation effects on ZnO light emitting diodes
TL;DR: In this article, annealed SiO2 and SiNx-passivated ZnO heterojunction light emitting diodes (LEDs) were used for postdielectric deposition annealing.
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Magnetic Properties of Fe- and Mn-Implanted SiC
Nikoleta Theodoropoulou,Arthur F. Hebard,S. N. G. Chu,M. E. Overberg,C. R. Abernathy,Stephen J. Pearton,Robert G. Wilson,J. M. Zavada +7 more
TL;DR: In this paper, the magnetic properties of the samples were examined by superconducting quantum interference device magnetometry under conditions that avoided amor-phization ~substrate temperature ;350°C!.
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UV ozone treatment for improving contact resistance on graphene
Chung Wei Chen,Chung Wei Chen,Fan Ren,G.C. Chi,Sheng Chun Hung,Yu-Ping Huang,Jihyun Kim,Ivan I. Kravchenko,Stephen J. Pearton +8 more
TL;DR: Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10−6 Ω-cm2) compared to untreated surfaces as mentioned in this paper.
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High energy proton irradiation effects on SiC Schottky rectifiers
S. Nigam,Jihyun Kim,Fan Ren,Gilyong Chung,M. F. MacMillan,R. Dwivedi,T. N. Fogarty,Richard Wilkins,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,John R. Williams +11 more
TL;DR: In this article, Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107-5×109 cm−2.