S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
More filters
Journal ArticleDOI
Si-implantation activation annealing of GaN up to 1400°C
J. F. Zolper,J. Han,Robert M. Biefeld,S. B. Van Deusen,William R. Wampler,D. J. Reiger,Stephen J. Pearton,James Williams,Hark Hoe Tan,Robert F. Karlicek,Richard A. Stall +10 more
TL;DR: In this article, an implant activation annealing of Si-implanted GaN is reported for temperatures from 1100 to 1400°C, where the sample must be encapsulated with AIN to prevent decomposition of the GaN layer.
Journal ArticleDOI
Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2 gas mixtures
TL;DR: In this article, changes in the near surface electrical properties of n−type (n=1×1017 cm−3) GaAs and AlGaAs after reactive ion etching in C2H6/H2/Ar or CCl2F2/O2 discharges (4 mTorr, 0.85 W cm−2) were investigated by Schottky diodes.
Journal ArticleDOI
Electrical and optical properties of GaN films implanted with Mn and Co
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,N. Y. Pashkova,Jihyun Kim,Fan Ren,M. E. Overberg,G. T. Thaler,C. R. Abernathy,Stephen J. Pearton,Robert G. Wilson +10 more
TL;DR: In this paper, the authors measured the electrical and optical properties of n-GaN samples implanted with high doses of Mn (3×1016 and 4×1016 cm−2) and Co (4×1016 cm−2).
Journal ArticleDOI
Ferromagnetism in GaN and SiC doped with transition metals
Stephen J. Pearton,Y. D. Park,C. R. Abernathy,M. E. Overberg,G. T. Thaler,Jihyun Kim,Fan Ren,John Zavada,Robert G. Wilson +8 more
TL;DR: In this paper, the authors review the field of wide bandgap dilute magnetic semiconductors, exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications.
Journal ArticleDOI
Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth
TL;DR: In this paper, optical deep level spectroscopy (ODLTS) and microcathodoluminescence (MCL) spectra were measured for a large group of n-GaN samples grown via metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth (ELOG), or hydride vapor phase epitaxy (HVPE).