S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN
Y. B. Hahn,David C. Hays,Sharon M. Donovan,C. R. Abernathy,J. Han,Randy J. Shul,Hyun Cho,K. B. Jung,Stephen J. Pearton +8 more
TL;DR: In this paper, the effects of additive noble gases, He, Ar and Xe to chlorine-based inductively coupled plasmas (ICPs) for etching of GaN, AlN and InN were studied in terms of etch rate and selectivity.
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Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4
TL;DR: In this paper, the carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic vapor phase epitaxy at 520-700°C with CCl4 as the dopant precursor were compared for the four possible combinations of trimethylgallium (TMGa), triethyl gallium (TEGa), arsine (AsH3), and tertiarybutylarsine (TBAs).
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Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Jerry W. Johnson,Albert G. Baca,R. D. Briggs,Randy J. Shul,Joel R. Wendt,C. Monier,Fan Ren,Stephen J. Pearton,Amir M. Dabiran,A. M. Wowchack,C. J. Polley,Peter Chow +11 more
TL;DR: In this paper, the performance of AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy was investigated for gate lengths in the range 0.1-1.2 μm.
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Hydrogen in Crystalline Silicon
TL;DR: The ability of hydrogen to migrate in crystalline Si at low temperatures (<400°C) and bond to a variety of both shallow and deep level impurities, passivating their electrical activity, is of fundamental and technological interest as discussed by the authors.
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Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors
B. S. Kang,Hung-Ta Wang,Fan Ren,M. Hlad,Brent P. Gila,Cammy R. Abernathy,Stephen J. Pearton,Changzhi Li,Zhen Ning Low,Jenshan Lin,Jerry W. Johnson,P. Rajagopal,John C. Roberts,Edwin L. Piner,K. J. Linthicum +14 more
TL;DR: In this article, a comparison of different gate oxides for AlGaN/GaN high-electron-mobility transistor (HEMT) pH sensors is presented, which shows a linear increase in drain-source current as the pH of the electrolyte solutions introduced to the gate region is decreased.