S
Steve Johnston
Researcher at National Renewable Energy Laboratory
Publications - 208
Citations - 4034
Steve Johnston is an academic researcher from National Renewable Energy Laboratory. The author has contributed to research in topics: Carrier lifetime & Silicon. The author has an hindex of 28, co-authored 203 publications receiving 3300 citations.
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Journal ArticleDOI
Cu 2 ZnSnS 4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment
Chang Yan,Jialiang Huang,Kaiwen Sun,Steve Johnston,Yuanfang Zhang,Heng Sun,Aobo Pu,Mingrui He,Fangyang Liu,Katja Eder,Limei Yang,Julie M. Cairney,Ned Ekins-Daukes,Ziv Hameiri,John A. Stride,Shiyou Chen,Martin A. Green,Xiaojing Hao +17 more
TL;DR: Yan et al. as mentioned in this paper used heat treatment to reduce non-radiative recombination within the heterojunction region, which is a major cause of limiting voltage output and overall performance.
Journal ArticleDOI
Beyond 11% Efficient Sulfide Kesterite Cu2ZnxCd1–xSnS4 Solar Cell: Effects of Cadmium Alloying
Chang Yan,Kaiwen Sun,Jialiang Huang,Steve Johnston,Fangyang Liu,Binesh Puthen Veettil,Kaile Sun,Aobo Pu,Fangzhou Zhou,John A. Stride,Martin A. Green,Xiaojing Hao +11 more
TL;DR: In this paper, a beyond 11% efficient Cd-alloyed CZTS solar cell is achieved, and the effects of Cdalloying and mechanism underpinning the performance improvement have been investigated.
Journal ArticleDOI
Recombination lifetime of In0.53Ga0.47As as a function of doping density
TL;DR: In this article, the authors have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2 ×1019 cm−3.
Journal ArticleDOI
Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells
Bill Nemeth,David L. Young,Matthew Page,Vincenzo LaSalvia,Steve Johnston,Robert C. Reedy,Paul Stradins +6 more
TL;DR: In this article, the authors apply n-and p-type polycrystalline silicon (poly-Si) films on tunneling SiOx to form passivated contacts to n-type Si wafers.
Proceedings ArticleDOI
Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat
Mario Kloos,Ian Bennett,Sarah Kurtz,Steve Johnston,N. Call,S. H. Glick,Kent Terwilliger,Michael D. Kempe,Peter Hacke +8 more
TL;DR: In this article, the authors performed accelerated lifetime testing of multicrystalline silicon PV modules in 85°C/85% relative humidity (RH) and 45°c/30% RH while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame.