An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives for SiO2 with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the character...

Low dielectric constant materials for microelectronics

This review summarizes the different methods of preparation of polymer nanoparticles including nanospheres and nanocapsules. The first part summarizes the basic principle of each method of nanoparticle preparation. It presents the most recent innovations and progresses obtained over the last decade and which were not included in previous reviews on the subject. Strategies for the obtaining of nanoparticles with controlled in vivo fate are described in the second part of the review. A paragraph summarizing scaling up of nanoparticle production and presenting corresponding pilot set-up is considered in the third part of the review. Treatments of nanoparticles, applied after the synthesis, are described in the next part including purification, sterilization, lyophilization and concentration. Finally, methods to obtain labelled nanoparticles for in vitro and in vivo investigations are described in the last part of this review.

Methods for the preparation and manufacture of polymeric nanoparticles.

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Surface nanobubbles are nanoscopic gaseous domains on immersed substrates which can survive for days. They were first speculated to exist about 20 years ago, based on stepwise features in force curves between two hydrophobic surfaces, eventually leading to the first atomic force microscopy (AFM) image in 2000. While in the early years it was suspected that they may be an artifact caused by AFM, meanwhile their existence has been confirmed with various other methods, including through direct optical observation. Their existence seems to be paradoxical, as a simple classical estimate suggests that they should dissolve in microseconds, due to the large Laplace pressure inside these nanoscopic spherical-cap-shaped objects. Moreover, their contact angle (on the gas side) is much smaller than one would expect from macroscopic counterparts. This review will not only give an overview on surface nanobubbles, but also on surface nanodroplets, which are nanoscopic droplets (e.g., of oil) on (hydrophobic) substrates immersed in water, as they show similar properties and can easily be confused with surface nanobubbles and as they are produced in a similar way, namely, by a solvent exchange process, leading to local oversaturation of the water with gas or oil, respectively, and thus to nucleation. The review starts with how surface nanobubbles and nanodroplets can be made, how they can be observed (both individually and collectively), and what their properties are. Molecular dynamic simulations and theories to account for the long lifetime of the surface nanobubbles are then reported on. The crucial element contributing to the long lifetime of surface nanobubbles and nanodroplets is pinning of the three-phase contact line at chemical or geometric surface heterogeneities. The dynamical evolution of the surface nanobubbles then follows from the diffusion equation, Laplace’s equation, and Henry’s law. In particular, one obtains stable surface nanobubbles when the gas influx from the gas-oversaturated water and the outflux due to Laplace pressure balance. This is only possible for small enough surface bubbles. It is therefore the gas or oil oversaturation ζ that determines the contact angle of the surface nanobubble or nanodroplet and not the Young equation. The review also covers the potential technological relevance of surface nanobubbles and nanodroplets, namely, in flotation, in (photo)catalysis and electrolysis, in nanomaterial engineering, for transport in and out of nanofluidic devices, and for plasmonic bubbles, vapor nanobubbles, and energy conversion. Also given is a discussion on surface nanobubbles and nanodroplets in a nutshell, including theoretical predictions resulting from it and future directions. Studying the nucleation, growth, and dissolution dynamics of surface nanobubbles and nanodroplets will shed new light on the problems of contact line pinning and contact angle hysteresis on the submicron scale.

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Surface nanobubbles and nanodroplets

The “ouzo effect” enables one to create a dispersion of small droplets in a surrounding liquid phase without the use of surfactants, dispersing agents, or mechanical agitation:  a phenomenon which can be of value in many disciplines. In the quantitative studies presented here, dispersions of oil droplets in water are formed by the addition of water to a solution of the oil dissolved in a solvent. This causes the oil to supersaturate and then nucleate into small droplets. The mean droplet diameter is a function only of the oil-to-solvent ratio at a given temperature. The number density of droplets formed can be controlled independently from the droplet diameter by changing the amount of water added. Smaller droplets are formed by using more hydrophilic cosolvents. The droplet size distribution is typically log−normal. The width of the distribution can be narrowed by mixing the components at an elevated temperature and then allowing the dispersion to cool.

Liquid Droplet Dispersions Formed by Homogeneous Liquid−Liquid Nucleation: “The Ouzo Effect”

A lack of inversion symmetry coupled with the presence of time-reversal symmetry endows 2D transition metal dichalcogenides with individually addressable valleys in momentum space at the K and K' points in the first Brillouin zone. This valley addressability opens up the possibility of using the momentum state of electrons, holes, or excitons as a completely new paradigm in information processing. The opportunities and challenges associated with manipulation of the valley degree of freedom for practical quantum and classical information processing applications were analyzed during the 2017 Workshop on Valleytronic Materials, Architectures, and Devices; this Review presents the major findings of the workshop.

Valleytronics: Opportunities, Challenges, and Paths Forward.

A method for manufacturing a semiconductive device comprising forming a mask for a semiconductive device structure over a layer of a semiconductor substrate and partially etching the layer to form lateral and vertical surfaces. Thicknesses of one to several atomic diameters of atoms that comprise said layer are removed from the lateral surfaces and the vertical surfaces that are located under the mask to form a target dimension of a semiconductive device structure.

Manufacturing a semiconductive device using a controlled atomic layer removal process

Etching yields of silicon in F2, Cl2, Br2, and HBr high density plasmas have been measured as a function of ion bombardment energy, ion bombardment angle, and plasma composition. This information contributes to a database of experimental values needed for feature profile evolution modeling. For all plasma chemistries, the etching yield increases approximately with the square root of ion energy. Pure Cl2 and pure HBr plasmas have very similar etching yields. Silicon etching rates are lower in HBr plasmas than in Cl2 plasmas due to lower ion fluxes, not lower etching yields. The dependence of the etching yield on ion bombardment angle is significantly different for Cl2 and HBr plasmas. The etching yield in Cl2 plasmas decreases rapidly for ion angles above 60° (measured from the surface normal), which results in significant ion scattering from the sidewalls, and may cause the sidewall bowing and microtrenching seen when patterning polysilicon with Cl2 plasmas. The etching yield in HBr plasmas decreases more...

Silicon etching yields in F2, Cl2, Br2, and HBr high density plasmas

The etching of polysilicon by low energy Cl2+HBr plasma beam was studied, and the etching yield as a function of composition, ion impingement energy and ion incident angle was measured. The etching yield by HBr plasma beam is slightly lower than Cl2 plasma beam. The angular dependence of etching yield by both Cl2 and HBr beam strongly suggests the mechanism of ion induced chemical etching, with highest etching yield at normal incident angle. For Cl2 beam, the etching yield almost keeps constant until the off-normal incident angle of ions increased to 45°, while for HBr beam, the etching yield starts dropping even with small off-normal angle. The angular dependence of etching yield by Cl2+HBr plasma at different composition exhibits similar trend as pure HBr. Using x-ray photoelectron spectroscopy, the coverage of Cl and Br on polysilicon surfaces after etching in Cl2+HBr plasmas was measured. The Cl coverage after etching with pure Cl2 plasma beam is about 1.4 times higher than the Br coverage after etchi...

Steven A. Vitale

Papers

Liquid Droplet Dispersions Formed by Homogeneous Liquid−Liquid Nucleation: “The Ouzo Effect”

Valleytronics: Opportunities, Challenges, and Paths Forward.

Manufacturing a semiconductive device using a controlled atomic layer removal process

Silicon etching yields in F2, Cl2, Br2, and HBr high density plasmas

Plasma–surface kinetics and simulation of feature profile evolution in Cl2+HBr etching of polysilicon