S
Steven J. Koester
Researcher at University of Minnesota
Publications - 289
Citations - 10112
Steven J. Koester is an academic researcher from University of Minnesota. The author has contributed to research in topics: Graphene & Field-effect transistor. The author has an hindex of 49, co-authored 274 publications receiving 8662 citations. Previous affiliations of Steven J. Koester include Boston Scientific Corporation & IBM.
Papers
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Journal ArticleDOI
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
TL;DR: In this paper, a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the telecom band is demonstrated with intrinsic responsivity up to 135
Journal ArticleDOI
Bandgap engineering of two-dimensional semiconductor materials
Andrey Chaves,Javad G. Azadani,Hussain Alsalman,Hussain Alsalman,D. R. da Costa,Riccardo Frisenda,A. J. Chaves,Seung Hyun Song,Young Duck Kim,Daowei He,Daowei He,Jiadong Zhou,Andres Castellanos-Gomez,François M. Peeters,Zheng Liu,Christopher L. Hinkle,Sang Hyun Oh,Peide D. Ye,Steven J. Koester,Young Hee Lee,Phaedon Avouris,Xinran Wang,Tony Low +22 more
TL;DR: In this paper, a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical 2D device technologies are provided.
Journal ArticleDOI
Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching
TL;DR: In this article, a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II, and III heterostructures was presented.
Proceedings ArticleDOI
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
Kern Rim,Jack O. Chu,Huajie Chen,Keith A. Jenkins,Thomas S. Kanarsky,Kam-Leung Lee,Anda Mocuta,Huilong Zhu,Ronnen Andrew Roy,J. Newbury,John A. Ott,K. Petrarca,Patricia M. Mooney,D. Lacey,Steven J. Koester,Kevin K. Chan,Diane C. Boyd,Meikei Ieong,Hon-Sum Philip Wong +18 more
TL;DR: In this article, current drive enhancements were demonstrated in the strained-Si PMOSFETs with sub-100 nm physical gate lengths for the first time, as well as in the NMOSFets with well-controlled threshold voltage V/sub T/ and overlap capacitance C/sub OV/ characteristics for L/sub poly/ and L/ sub eff/ below 80 nm and 60 nm.
Patent
High speed composite p-channel Si/SiGe heterostructure for field effect devices
Jack O. Chu,R. Hammond,Khalid EzzEldin Ismail,Steven J. Koester,Patricia M. Mooney,John A. Ott +5 more
TL;DR: In this paper, a method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility.