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Steven M. Guertin

Bio: Steven M. Guertin is an academic researcher from California Institute of Technology. The author has contributed to research in topics: CPU cache & Upset. The author has an hindex of 11, co-authored 37 publications receiving 606 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, the authors compared the performance of advanced flash memories including, multi-level flash technology, compared with results from previous generations, and found that total dose failure levels are comparable to or lower than those of older technologies, but are likely still caused by degradation of the internal charge pump.
Abstract: Radiation tests of advanced flash memories including, multi-level flash technology, are compared with results from previous generations. Total dose failure levels are comparable to or lower than those of older technologies, but are likely still caused by degradation of the internal charge pump. Small numbers of read errors were observed during single event tests of the multi-level devices that appear to be caused by shifts in the sense amplifier detection levels or cell threshold shifts rather than loss of electrons off the floating gate.

168 citations

Journal ArticleDOI
TL;DR: A benchmark suite for high-reliability systems that is designed for field-programmable gate arrays and microprocessors is proposed and the development process is described and neutron test data is reported for the hardware and software benchmarks.
Abstract: Performance benchmarks have been used over the years to compare different systems. These benchmarks can be useful for researchers trying to determine how changes to the technology, architecture, or compiler affect the system's performance. No such standard exists for systems deployed into high radiation environments, making it difficult to assess whether changes in the fabrication process, circuitry, architecture, or software affect reliability or radiation sensitivity. In this paper, we propose a benchmark suite for high-reliability systems that is designed for field-programmable gate arrays and microprocessors. We describe the development process and report neutron test data for the hardware and software benchmarks.

77 citations

Journal ArticleDOI
TL;DR: In this article, a novel way to measure the radiation characteristics of DRAM memory cells is presented, where the change in retention time (the time period required for a cell to upset without refreshing) is used to evaluate the effect of irradiation on the DRAM cells.
Abstract: A novel way to measure the radiation characteristics of DRAM memory cells is presented. Radiation exposure tends to drive retention times lower for cells. The change in retention time (the time period required for a cell to upset without refreshing) is used to measure the effect of irradiation on the DRAM cells. Both the radiation response of a single DRAM cell and the response of all cells as a statistical whole are analyzed.

52 citations

Journal ArticleDOI
TL;DR: In this article, the authors measured the proton and heavy ion upset susceptibility for six types of storage elements in an advanced commercial processor, the PowerPC750, from two manufacturers: Motorola and IBM.
Abstract: Proton and heavy ion upset susceptibility has been measured individually for six types of storage elements in an advanced commercial processor, the PowerPC750, from two manufacturers: Motorola and IBM. Data on interfering program malfunctions was also collected. Compared to earlier PPC603e results, the upset susceptibility has decreased somewhat.

46 citations

Journal ArticleDOI
TL;DR: In this paper, heavy ion irradiation of flash memories shows loss of stored data and the fluence dependence is indicative of microdose effects, and other qualitative factors identifying the effect as microdose are discussed.
Abstract: Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model

45 citations


Cited by
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Journal ArticleDOI
TL;DR: It is shown that dynamic RAM, the main memory in most modern computers, retains its contents for several seconds after power is lost, even at room temperature and even if removed from a motherboard, and this phenomenon limits the ability of an operating system to protect cryptographic key material from an attacker with physical access to a machine.
Abstract: Contrary to widespread assumption, dynamic RAM (DRAM), the main memory in most modern computers, retains its contents for several seconds after power is lost, even at room temperature and even if removed from a motherboard. Although DRAM becomes less reliable when it is not refreshed, it is not immediately erased, and its contents persist sufficiently for malicious (or forensic) acquisition of usable full-system memory images. We show that this phenomenon limits the ability of an operating system to protect cryptographic key material from an attacker with physical access to a machine. It poses a particular threat to laptop users who rely on disk encryption: we demonstrate that it could be used to compromise several popular disk encryption products without the need for any special devices or materials. We experimentally characterize the extent and predictability of memory retention and report that remanence times can be increased dramatically with simple cooling techniques. We offer new algorithms for finding cryptographic keys in memory images and for correcting errors caused by bit decay. Though we discuss several strategies for mitigating these risks, we know of no simple remedy that would eliminate them.

1,311 citations

Proceedings Article
28 Jul 2008
TL;DR: In this article, cold reboots are used to find cryptographic keys in memory images and for correcting errors caused by bit decay, which limits the ability of an operating system to protect cryptographic key material from an attacker with physical access.
Abstract: Contrary to popular assumption, DRAMs used in most modern computers retain their contents for several seconds after power is lost, even at room temperature and even if removed from a motherboard. Although DRAMs become less reliable when they are not refreshed, they are not immediately erased, and their contents persist sufficiently for malicious (or forensic) acquisition of usable full-system memory images. We show that this phenomenon limits the ability of an operating system to protect cryptographic key material from an attacker with physical access. We use cold reboots to mount successful attacks on popular disk encryption systems using no special devices or materials. We experimentally characterize the extent and predictability of memory remanence and report that remanence times can be increased dramatically with simple cooling techniques. We offer new algorithms for finding cryptographic keys in memory images and for correcting errors caused by bit decay. Though we discuss several strategies for partially mitigating these risks, we know of no simple remedy that would eliminate them.

344 citations

Journal ArticleDOI
TL;DR: In this paper, the authors examine the impact of recent developments and the challenges they present to the radiation effects community and discuss future radiation effects challenges as the electronics industry looks beyond Moore's law to alternatives to traditional CMOS technologies.
Abstract: Advances in microelectronics performance and density continue to be fueled by the engine of Moore's law. Although lately this engine appears to be running out of steam, recent developments in advanced technologies have brought about a number of challenges and opportunities for their use in radiation environments. For example, while many advanced CMOS technologies have generally shown improving total dose tolerance, single-event effects continue to be a serious concern for highly scaled technologies. In this paper, we examine the impact of recent developments and the challenges they present to the radiation effects community. Topics covered include the impact of technology scaling on radiation response and technology challenges for both total dose and single-event effects. We include challenges for hardening and mitigation techniques at the nanometer scale. Recent developments leading to hardness assurance challenges are covered. Finally, we discuss future radiation effects challenges as the electronics industry looks beyond Moore's law to alternatives to traditional CMOS technologies.

309 citations

Journal ArticleDOI
TL;DR: An overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation is presented in this paper, where the authors present an overview of the radiation effects on metal-oxide-semiconductor devices and integrated circuits.
Abstract: Total ionizing dose radiation effects on the electrical properties of metal-oxide-semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation-induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation.

274 citations

Journal ArticleDOI
TL;DR: Juno is a PI-led mission to Jupiter, the second mission in NASA’s New Frontiers Program as mentioned in this paper, which carries eight science instruments that perform nine science investigations (radio science utilizes the communications antenna).
Abstract: Juno is a PI-led mission to Jupiter, the second mission in NASA’s New Frontiers Program. The 3625-kg spacecraft spins at 2 rpm and is powered by three 9-meter-long solar arrays that provide ∼500 watts in orbit about Jupiter. Juno carries eight science instruments that perform nine science investigations (radio science utilizes the communications antenna). Juno’s science objectives target Jupiter’s origin, interior, and atmosphere, and include an investigation of Jupiter’s polar magnetosphere and luminous aurora.

184 citations