Subhashri Chatterjee

Bio: Subhashri Chatterjee is an academic researcher from Shizuoka University. The author has contributed to research in topics: Charge carrier & Ionization. The author has an hindex of 4, co-authored 11 publications receiving 44 citations.

Quantum drift-diffusion model for IMPATT devices

Abstract: Quantum correction is necessary on the classical drift-diffusion (CLDD) model to predict the accurate behavior of high frequency performance of ATT devices at frequencies greater than 200 GHz when the active layer of the device shrinks in the range of 150---350 nm. In the present work, a quantum drift-diffusion model for impact avalanche transit time (IMPATT) devices has been developed by incorporating appropriate quantum mechanical corrections based on density-gradient theory which macroscopically takes into account important quantum mechanical effects such as quantum confinement, quantum tunneling, etc. into the CLDD model. Quantum potentials (synonymous as Bohm potentials) have been incorporated in the current density equations as necessary quantum mechanical corrections for the analysis of millimeter-wave (mm-wave) and Terahertz (THz) IMPATT devices. It is observed that the large-signal (L-S) performance of the device is degraded due to the incorporation of quantum corrections into the model when the frequency of operation increases above 200 GHz; while the effect of quantum corrections are negligible for the devices operating at lower mm-wave frequencies.

Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors

Abstract: This paper contains additional validations of a comprehensive analytical model based on multistage scattering phenomena to evaluate the impact ionization rates of charge carriers in semiconductors which was proposed by the authors and reported earlier. The model has been used to evaluate the ionization rates of both electrons and holes in some potential wide bandgap (WBG) semiconductors such as Wurtzite-GaN (Wz-GaN), type-IIb diamond and 6H-SiC. The numerical results obtained from the analytical model within the respective electric field ranges under consideration have been compared with the ionization rate values calculated by using the empirical relations fitted from the experimentally measured data. The calculated values of impact ionization rates of electrons and holes in all the WBG semiconductors under consideration are found to be in close agreement with the experimental results.

Fabrication of 3D glass-ceramic micro- /nano-structures by direct laser writing lithography and pyrolysis

Abstract: Glass-ceramics play an important role in todays science and industry as it can withstand immense heat, mechanical and other hazards. Consequently, there is a need to find ever-new ways to acquire more sophisticated free-form 3D ceramic and glass structures. Recently, stereo-lithographic 3D printing of hybrid organic-inorganic photopolymer and subsequent pyrolysis was demonstrated to be capable of providing true 3D ceramic and glass structures. However, such approach was limited to (sub-)millimeter scale, while one of the aims in the field is to acquire functional 3D glass-like structures in micro- or even nano-dimensions. In this paper, we explore a possibility to apply ultrafast 3D laser nanolithography in conjunction with pyrolysis to acquire glass-ceramic 3D structures in micro- and nano-scale. Laser fabrication allows production of initial 3D structures with relatively small (hundreds of nm) feature sizes out of hybrid organic-inorganic material SZ2080. Then, a post-fabrication heating at different temperatures up to 1000°C in Ar , air or O2 atmospheres decomposes organic part of the material leaving only the glass-ceramic component of the hybrid. As we show, this can be done to 3D woodpiles and bulk objects. We uncover that the shrinkage during sintering can reach up to 40%, while the aspect ratio of single features as well as filling ratio of the whole object remains the same. This hints at homogeneous reduction in size that can be easily accounted for and pre-compensated before manufacturing. Additionally, the structures prove to be relatively resilient to focused ion beam (FIB) milling, hinting at increased rigidity. Finally, thermal gravimetric analysis (TGA) and Fourier transform infrared micro-spectroscopy measurements are performed in order to uncover undergoing chemical and physical phenomena during pyrolysis and composition of the remnant material. The proposed post-processing approach offers a straightforward way to downscale true 3D micro-/nanostructures for applications in nanophotonics, microoptics and mechanic devices with improved performance while being highly resilient to harsh surrounding conditions.

Direct laser writing of electromagnetic metasurfaces for infra-red frequency range

Abstract: Electromagnetic metasurfaces allow realization of various photonic functionalities using sub-wavelength thick layers of artificially structured material. Recently, metasurfaces consisting of three-dimensional metallic inclusions arranged into two-dimensional periodic arrays were proposed as a way to realize metasurfaces that have no ground plane and are optically transparent in a wide spectral range. However, practical patterning of such structures is beyond the reach of traditional planar patterning techniques. To address this challenge, we have employed femtosecond direct laser write (DLW) technique combined with simple metallization process. Here, we report fabrication and properties of functional metasurfaces consisting of metallic helices and vertical split-ring resonators that can be used as perfect absorbers and polarization converters. In accordance with theoretical predictions, our samples exhibit perfect absorption resonances tunable in the wavelength range of 4.5 − 9.2 μm by scaling the unit cell size. Perfect absorber structures exhibit polarization and incidence angle-invariant operation with measured absorbance in excess of 0.85 for incidence angles up to 30°. Similar structures may find applications innarrow-band infra-red detectors and emitters, spectral filters, and be combined into multi-functional, multi-layered structures.

Three-dimensional microfabrication with two-photon absorbed photopolymerization

Abstract: Fabrication technology for three-dimensional microstructures with submicrometer accuracy has been needed in the fields of modern optics, such as micro mechanical system driven with photon pressure[1, 2] and laser-trapping near-filed optical microscopy[3]. However, the present accuracy with stereolithography[4] is not yet satisfactory to this purpose. Moreover, it is not so flexible to make a three- dimensional structure with the present technique. In this paper, we propose a new microfabrication method in which a point in three-dimensional volume of UV photopolymerizing resin is photopolymerized through two-photon absorption process. The microfabrication with two-photon absorption drastically improves the depth resolution due to a nonlinearlity between the power of the irradiation and that of the absorption[5].

Functional Materials for Two-Photon Polymerization in Microfabrication

Abstract: Direct laser writing methods based on two-photon polymerization (2PP) are powerful tools for the on-demand printing of precise and complex 3D architectures at the micro and nanometer scale. While much progress was made to increase the resolution and the feature size throughout the years, by carefully designing a material, one can confer specific functional properties to the printed structures thus making them appealing for peculiar and novel applications. This Review summarizes the state-of-the-art of functional resins and photoresists used in 2PP, discussing both the range of material functions available and the methods used to prepare them, highlighting advantages and disadvantages of different classes of materials in achieving certain properties.

Pyrolysis-induced shrinking of three-dimensional structures fabricated by two-photon polymerization: experiment and theoretical model.

Abstract: The introduction of two-photon polymerization (TPP) into the area of Carbon Micro Electromechanical Systems (C-MEMS) has enabled the fabrication of three-dimensional glassy carbon nanostructures with geometries previously unattainable through conventional UV lithography. Pyrolysis of TPP structures conveys a characteristic reduction of feature size-one that should be properly estimated in order to produce carbon microdevices with accuracy. In this work, we studied the volumetric shrinkage of TPP-derived microwires upon pyrolysis at 900 °C. Through this process, photoresist microwires thermally decompose and shrink by as much as 75%, resulting in glassy carbon nanowires with linewidths between 300 and 550 nm. Even after the thermal decomposition induced by the pyrolysis step, the linewidth of the carbon nanowires was found to be dependent on the TPP exposure parameters. We have also found that the thermal stress induced during the pyrolysis step not only results in axial elongation of the nanowires, but also in buckling in the case of slender carbon nanowires (for aspect ratios greater than 30). Furthermore, we show that the calculated residual mass fraction that remains after pyrolysis depends on the characteristic dimensions of the photoresist microwires, a trend that is consistent with several works found in the literature. This phenomenon is explained through a semi-empirical model that estimates the feature size of the carbon structures, serving as a simple guideline for shrinkage evaluation in other designs.