scispace - formally typeset
Search or ask a question
Author

Subhendu Chakraborty

Bio: Subhendu Chakraborty is an academic researcher. The author has contributed to research in topics: Charge carrier & Ionization. The author has an hindex of 1, co-authored 2 publications receiving 10 citations.

Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the effect of energy loss of charge carriers due to carrier-carrier interactions prior to impact ionization on the static and large-signal characteristics of double-drift region impact avalanche transit time (IMPATT) diodes based on Si designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies such as 94, 140, and 220 GHz.
Abstract: In this paper, we study the effect of energy loss of charge carriers due to carrier-carrier interactions prior to impact ionization on the static and large-signal characteristics of double-drift region impact avalanche transit time (IMPATT) diodes based on Si designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies such as 94, 140, and 220 GHz. The above mentioned effect has been incorporated in the simulation by taking into account a recently reported generalized analytical model of impact ionization rate of charge carriers based on multistage scattering phenomena in the base semiconductor. Results are compared with static and large-signal signal simulation results of the same diodes that we have reported earlier by taking into account the empirical relation of ionization rates fitted from the experimental data (experiment was carried out on IMPATT structures suitable for operating near 100 GHz). It is observed that both the large-signal RF power output and DC to RF conversion efficiency of the diodes are deteriorated significantly due to reduced ionization rates as a consequence of carrier-carrier collision events prior to the impact ionization. This effect is found to be more pronounced in 140 and 220 GHz diodes due to the enhanced carrier-carrier collisions within those diodes having greater background doping densities as compared to 94 GHz diode. The simulation results presented in this paper found to be in closer agreement with the experimental results as compared to the results that we have reported earlier.

11 citations


Cited by
More filters
Journal ArticleDOI
TL;DR: In this paper, a chemical-vapor-deposited (CVD) diamond-based double-drift-region (DDR) impact avalanche transit-time diode (IMPATT) was proposed for use in microwave applications.
Abstract: We propose a chemical-vapor-deposited (CVD) diamond-based double-drift-region (DDR) impact avalanche transit-time diode (IMPATT) for use in microwave applications. CVD diamond is taken as the base substrate material. Simulations were carried out to perform direct-current (DC), small-signal, and noise analyses on the IMPATT. The results are in agreement with experimental reports. The IMPATT based on CVD diamond offers better performance compared with other materials reported to date at 26 GHz to 40 GHz. In the near future, this device could represent the best alternative for designers and semiconductor industry, due to its numerous advantages including higher DC-to-radiofrequency (RF) conversion efficiency (27.81%), highest power density (6.206 × 109 W m−2), minimum noise value (− 98.22 dBm), and best optimized conductance–susceptance profile with lower quality factor (0.0215).

18 citations

Journal ArticleDOI
TL;DR: In this article, the effects of acoustic phonons on the noise performance of a double-drift region silicon-based impact avalanche transit-time diode has been investigated and reported.
Abstract: Through this paper, the effects of acoustic phonons on the noise performance of avalanche transit-time devices have been investigated and reported. For this study, a double-drift-region silicon-based impact avalanche transit-time diode has been considered at operating frequencies of 94 GHz, 140 GHz and 220 GHz. To analyze the acoustic phonon effects on noise performance, the interactions of charge carriers with acoustic deformation potential and piezoelectric acoustic phonons have been considered in addition to all possible types of scattering events. These effects have been analyzed through a numerical expression for the ionization rate of charge carriers and incorporated in the noise analysis. The noise performance is evaluated in terms of noise spectral density (NSD) and noise measure (NM). The results show that due to acoustic phonons, values of NSD and NM significantly increase.

13 citations

Journal ArticleDOI
TL;DR: In this article, the RF output power dissipated per unit area was calculated using Runge-Kutta method for the high-moderate-moderate high (n+n-p-p+p+) doping profile of double drift region (DDR)-based impact avalanch.
Abstract: The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanch...

10 citations

Journal ArticleDOI
TL;DR: In this article, the influence of inter-carrier scattering phenomena on the noise performance of double-drift region (DDR) impact avalanche transit time diodes has been investigated.
Abstract: The influence of inter-carrier scattering phenomena on the noise performance of double-drift region (DDR) impact avalanche transit time diodes has been investigated. Three optimized Si DDR ...

7 citations

Journal ArticleDOI
TL;DR: In this article, the effects of high doping density on the high frequency and noise properties of highly doped impact avalanche transit time (IMPATT) devices based on different wide bandgap (WBG) semiconductors, like 4H-SiC, Wurtzite-GaN (WzGaN), and type-IIb diamond (C) have been studied.
Abstract: A major amount of energy of mobile electrons and holes in a semiconductor under electric field are lost due to inter-carrier collisions prior to ionising collision. This fact causes a decrease in the ionisation probability which leads to the deterioration in ionisation rates especially when the doping density is high. The effects of this phenomenon on the high frequency and noise properties of highly doped impact avalanche transit time (IMPATT) devices based on different wide bandgap (WBG) semiconductors, like 4H-SiC, Wurtzite-GaN (Wz-GaN) and type-IIb diamond (C) have been studied in this paper. Significant deteriorations in the diodes' high frequency and noise performance have been observed in the simulation results. The simulation results have been compared with the experimental data in order to validate those.

5 citations