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Sudha Mokkapati

Bio: Sudha Mokkapati is an academic researcher from Monash University, Clayton campus. The author has contributed to research in topics: Quantum dot & Nanowire. The author has an hindex of 30, co-authored 110 publications receiving 3263 citations. Previous affiliations of Sudha Mokkapati include Australian National Fabrication Facility & Cardiff University.


Papers
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Journal ArticleDOI
TL;DR: In this article, the Fabry-Perot cavity was designed to optimize the material quality and minimize surface recombination of (Al)GaAs nanowires, which is an important material system for infrared lasers that is extensively used for conventional lasers.
Abstract: Near-infrared lasers are important for optical data communication, spectroscopy and medical diagnosis. Semiconductor nanowires offer the possibility of reducing the footprint of devices for three-dimensional device integration and hence are being extensively studied in the context of optoelectronic devices1, 2. Although visible and ultraviolet nanowire lasers have been demonstrated widely3, 4, 5, 6, 7, 8, 9, 10, 11, progress towards room-temperature infrared nanowire lasers has been limited because of material quality issues and Auger recombination12, 13. (Al)GaAs is an important material system for infrared lasers that is extensively used for conventional lasers. GaAs has a very large surface recombination velocity, which is a serious issue for nanowire devices because of their large surface-to-volume ratio14, 15. Here, we demonstrate room-temperature lasing in core–shell–cap GaAs/AlGaAs/GaAs nanowires by properly designing the Fabry–Perot cavity, optimizing the material quality and minimizing surface recombination. Our demonstration is a major step towards incorporating (Al)GaAs nanowire lasers into the design of nanoscale optoelectronic devices operating at near-infrared wavelengths.

502 citations

Journal ArticleDOI
TL;DR: In this article, the authors review the theory of nanophotonic light trapping, with experimental examples given where possible, focusing particularly on periodic structures, since this is where physical understanding is most developed, and where theory and experiment can be most directly compared.
Abstract: Nanophotonic light trapping for solar cells is an exciting field that has seen exponential growth in the last few years. There has been a growing appreciation for solar energy as a major solution to the world’s energy problems, and the need to reduce materials costs by the use of thinner solar cells. At the same time, we have the newly developed ability to fabricate controlled structures on the nanoscale quickly and cheaply, and the computational power to optimize the structures and extract physical insights. In this paper, we review the theory of nanophotonic light trapping, with experimental examples given where possible. We focus particularly on periodic structures, since this is where physical understanding is most developed, and where theory and experiment can be most directly compared. We also provide a discussion on the parasitic losses and electrical effects that need to be considered when designing nanophotonic solar cells.

286 citations

Journal ArticleDOI
TL;DR: In this article, the authors acknowledge the A. R. C. and NOW for======Research conducted at the FOM as a part of the Joint Solar Program (JSP) for financial support.
Abstract: The authors acknowledge the A. R. C. and NOW for research conducted at the FOM as a part of the Joint Solar Programme for financial support.

231 citations

Journal ArticleDOI
TL;DR: Growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers are reported.
Abstract: We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

201 citations

Journal ArticleDOI
TL;DR: In this article, the important device applications of various III-V compound semiconductors are reviewed for optical fiber communications, infrared and visible LEDs/LDs and high efficiency solar cells.

201 citations


Cited by
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Journal ArticleDOI
TL;DR: Recent advances at the intersection of plasmonics and photovoltaics are surveyed and an outlook on the future of solar cells based on these principles is offered.
Abstract: The emerging field of plasmonics has yielded methods for guiding and localizing light at the nanoscale, well below the scale of the wavelength of light in free space. Now plasmonics researchers are turning their attention to photovoltaics, where design approaches based on plasmonics can be used to improve absorption in photovoltaic devices, permitting a considerable reduction in the physical thickness of solar photovoltaic absorber layers, and yielding new options for solar-cell design. In this review, we survey recent advances at the intersection of plasmonics and photovoltaics and offer an outlook on the future of solar cells based on these principles.

8,028 citations

Proceedings Article
01 Jan 1999
TL;DR: In this paper, the authors describe photonic crystals as the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures, and the interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.
Abstract: The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

2,722 citations

Journal ArticleDOI
TL;DR: Lasing performance, coupled with the facile solution growth of single-crystal nanowires and the broad stoichiometry-dependent tunability of emission colour, makes lead halide perovskites ideal materials for the development of nanophotonics, in parallel with the rapid development in photovoltaics from the same materials.
Abstract: The remarkable performance of lead halide perovskites in solar cells can be attributed to the long carrier lifetimes and low non-radiative recombination rates, the same physical properties that are ideal for semiconductor lasers. Here, we show room-temperature and wavelength-tunable lasing from single-crystal lead halide perovskite nanowires with very low lasing thresholds (220 nJ cm(-2)) and high quality factors (Q ∼ 3,600). The lasing threshold corresponds to a charge carrier density as low as 1.5 × 10(16) cm(-3). Kinetic analysis based on time-resolved fluorescence reveals little charge carrier trapping in these single-crystal nanowires and gives estimated lasing quantum yields approaching 100%. Such lasing performance, coupled with the facile solution growth of single-crystal nanowires and the broad stoichiometry-dependent tunability of emission colour, makes lead halide perovskites ideal materials for the development of nanophotonics, in parallel with the rapid development in photovoltaics from the same materials.

2,324 citations

Journal ArticleDOI
TL;DR: In this paper, the potential of hot electrons in metallic structures and its potential as an alternative to conventional electron-hole separation in semiconductor devices are discussed along with challenges in terms of the materials, architectures and fabrication methods.
Abstract: Optical generation of hot electrons in metallic structures and its potential as an alternative to conventional electron–hole separation in semiconductor devices are reviewed. The possibilities for realizing high conversion efficiencies with low fabrication costs are discussed along with challenges in terms of the materials, architectures and fabrication methods

2,237 citations

Book ChapterDOI
27 Jan 2010

878 citations