Sudipto Roy Barman

Bio: Sudipto Roy Barman is an academic researcher from Central Electronics Engineering Research Institute. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Angle-resolved photoemission spectroscopy. The author has an hindex of 27, co-authored 118 publications receiving 2837 citations. Previous affiliations of Sudipto Roy Barman include Max Planck Society & Indian Department of Atomic Energy.

Electronic structure of early 3d-transition-metal oxides by analysis of the 2p core-level photoemission spectra.

Abstract: The electronic structures of a wide range of early transition-metal (TM) compounds, including Ti and V oxides with metal valences ranging from 2+ to 5+ and formal d-electron numbers ranging from 0 to 2, have been investigated by a configuration-interaction cluster model analysis of the core-level metal 2p x-ray photoemission spectra (XPS). Inelastic energy-loss backgrounds calculated from experimentally measured electron-energy-loss spectra (EELS) were subtracted from the XPS spectra to remove extrinsic loss features. Parameter values deduced for the charge-transfer energy Delta and the d-d Coulomb repulsion energy U are shown to continue the systematic trends established previously for the late TM compounds, giving support to a charge-transfer mechanism for the satellite structures. The early TM compounds are characterized by a large metal d-ligand p hybridization energy, resulting in strong covalency in these compounds. Values for Delta and U suggest that many early TM compounds should be reclassified as intermediate between the charge-transfer regime and the Mott-Hubbard regime.

Band theory for ground-state properties and excitation spectra of perovskite LaMO3 (M=Mn, Fe, Co, Ni).

Abstract: It is shown that the local spin-density approximation describes well electronic structures of perovskite $\mathrm{La}M{\mathrm{O}}_{3}$ ( $M\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}$ Mn, Fe, Co, Ni) for the ground-state and single-electron excited-state properties. Inclusion of details of crystal structures distorted from the cubic structure is crucial to reproduce different magnetic structures and insulating states. Calculated x-ray photoemission spectra are in very good agreement with experimental ones, and its angular momentum characters are in conformity with ultraviolet photoemission spectra.

Physical properties of ZnO thin films deposited at various substrate temperatures using spray pyrolysis

Abstract: Zinc oxide (ZnO) thin films have been deposited with various substrate temperatures by spray pyrolysis technique onto glass substrates. X-ray diffraction (XRD) results showed the random growth orientation of the crystallites and the presence of the wurtzite phase of ZnO. The x-ray photoelectron spectroscopy (XPS) measurements reveal the presence of Zn 2+ and chemisorbed oxygen in ZnO thin films. Atomic force micrograms (AFM) revealed a granular, polycrystalline morphology for the films. The grain size is found to increase as the substrate temperature increases. All films exhibit a transmittance of about 85% in the visible region. The photoluminescence (PL) measurements indicated that the intensity of emission peaks significantly varying with substrate temperature. Electrical resistivity has been found to decrease; while the carrier concentration increases with substrate temperature.

Large negative magnetoresistance in a ferromagnetic shape memory alloy: Ni2+xMn1−xGa

Abstract: 5% negative magnetoresistance (MR) at room temperature has been observed in bulk Ni2+xMn1−xGa. This indicates the possibility of using Ni2+xMn1−xGa as magnetic sensors. We have measured MR in the ferromagnetic state for different compositions (x=0–0.2) in the austenitic, premartensitic, and martensitic phases. MR is found to increase with x. While MR for x=0 varies almost linearly in the austenitic and premartensitic phases, in the martensitic phase it shows a cusplike shape. This has been explained by the changes in twin and domain structures in the martensitic phase. In the austenitic phase, which does not have twin structure, MR agrees with theory based on s-d scattering model.

Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga

Abstract: 5% negative magnetoresistance (MR) at room temperature has been observed in bulk Ni_{2+x}Mn_{1-x}Ga. This indicates the possibility of using Ni_{2+x}Mn_{1-x}Ga as magnetic sensors. We have measured MR in the ferromagnetic state for different compositions (x=0-0.2) in the austenitic, pre-martensitic and martensitic phases. MR is found to increase with x. While MR for x=0 varies almost linearly in the austenitic and pre-martensitic phases, in the martensitic phase it shows a cusp-like shape. This has been explained by the changes in twin and domain structures in the martensitic phase. In the austenitic phase, which does not have twin structure, MR agrees with theory based on s-d scattering model.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Band parameters for III–V compound semiconductors and their alloys

Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for nitrogen-containing semiconductors

Abstract: We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...