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Reflection electron energy loss spectroscopy for ultrathin gate oxide materials

Quantitative analysis of diffraction and infra-red spectra of composite cement/BaSO4/Fe3O4 for determining correlation between attenuation coefficient, structural and optical properties

Electronic properties of composite iron (II, III) oxide (Fe3O4) carbonaceous absorber materials by electron spectroscopy

Composition dependence of dielectric and optical properties of Hf-Zr-silicate thin films grown on Si(100) by atomic layer deposition

Dielectric and optical properties of (ZrO2)x(SiO2)1−x dielectric thin films, grown on Si(100) by the atomic layer deposition method, were studied by means of reflection electron energy loss spectroscopy (REELS). The quantitative analysis of REELS spectra was carried out by using the quantitative analysis of electron energy loss spectra-e(k,ω)-REELS software to determine the dielectric function and optical properties by using an analysis of experimental REELS cross sections from the simulated energy loss function (ELF). For ZrO2, the ELF shows peaks in the vicinity of 10, 15, 21, 27, 35, 42, and 57 eV. For SiO2, a broad peak at 23 eV with a very weak shoulder at 15 eV and a shoulder at 34 eV were observed, while for Zr silicates (x=0.75 and 0.5), the peak position is similar to that of ZrO2. For Zr silicates with high SiO2 concentration (x=0.25), the peak positions are similar to that of SiO2, but the peak at 42 eV, which is due to excitation of Zr N2,3 shell electrons, still exist. This indicates that the...

Dielectric and optical properties of Zr silicate thin films grown on Si(100) by atomic layer deposition

The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band offset values for HfZrO4 silicate increased from 5.4 eV to 5.8 eV, from 2.5 eV to 2.75 eV, and from 1.78 eV to 1.93 eV, respectively, as the mole fraction (x) of SiO2 increased from 0.1 to 0.2. This increase in the conduction band and valence band offsets, as a function of increasing SiO2 mole fraction, decreased the gate leakage current density. As a result, HfZrO4 silicate thin films were found to be better for advanced gate stack applications because they had adequate band gaps to ensure sufficient conduction band offsets and valence band offsets to Si.

Sung Heo

Papers

Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)