Sung Jin Jo

TL;DR: This work describes materials and fabrication concepts that address many of these challenges of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

TL;DR: The fabrication of a flexible transparent electrode with superior mechanical, electrical and optical properties is demonstrated by embedding a AgNW film into a transparent polymer matrix and can produce electrodes with an ultrasmooth and extremely deformable transparent electrode that have sheet resistance and transmittance comparable to those of an ITO electrode.

TL;DR: In this article, a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide (WO3) for transparent organic light-emitting diodes was developed.

TL;DR: In this article, the authors used an indium oxide (In2O3) thin film as the n-channel active layer by RF sputtering at room temperature and showed a thickness-dependent performance in the range of 48-8 nm, which is ascribed to the total carrier number in the active layer.

TL;DR: In this article, a new class of thin, releasable single-crystal silicon semiconductor device is presented that enables integration of high-performance electronics on nearly any type of substrate.