An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

Semiconductor device and method for manufacturing the same, and electric device

The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

Electronic device, semiconductor device and manufacturing method thereof

Embodiments of the present invention provide an in-cell touch panel and a display device to decrease the influence of the touch driving electrode in the in-cell touch panel on image display. The in-cell touch panel includes an upper substrate and a lower substrate opposite to each other, and includes a plurality of touch sensing electrodes provided on the upper substrate and a plurality of touch driving electrodes provided on the lower substrate, wherein the touch sensing electrodes are laterally distributed, and the touch driving electrodes are longitudinally distributed; wherein the touch sensing electrodes include one or a plurality of touch sensing sub-electrodes which are parallel to each other and distributed laterally, and the plurality of touch sensing sub-electrodes are in parallel connection therebetween.

In-cell touch panel and display device

A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

Thin film transitor substrate and method of manufacturing the same

A method of manufacturing a thin film transistor array substrate includes forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming first, second, and third passivation films successively on the substrate. Over the above multi-layered passivation film forming a first photoresist pattern including a first portion formed on part of the drain electrode and on the pixel region, and a second portion. The second portion is thicker than the first portion. Then, patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern, and forming a transparent electrode pattern on the second passivation layer.

Thin film transistor array substrate for a display panel and a method for manufacturing a thin film transistor array substrate for a display panel

Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein.

Display substrate having quantum well for improved electron mobility and display device including the same

A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.

Thin film transistor substrate and the method thereof

Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

Sung-Ryul Kim

Papers

Thin film transitor substrate and method of manufacturing the same

Thin film transistor array substrate for a display panel and a method for manufacturing a thin film transistor array substrate for a display panel

Display substrate having quantum well for improved electron mobility and display device including the same

Thin film transistor substrate and the method thereof

Thin-film transistor display panel and method of fabricating the same