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Suranjana Banerjee
Researcher at West Bengal University of Technology
Publications - 32
Citations - 303
Suranjana Banerjee is an academic researcher from West Bengal University of Technology. The author has contributed to research in topics: RF power amplifier & IMPATT diode. The author has an hindex of 11, co-authored 30 publications receiving 292 citations. Previous affiliations of Suranjana Banerjee include University of Calcutta.
Papers
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Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
TL;DR: In this paper, a large-signal simulation model based on non-sinusoidal voltage excitation is used to study the influence of skin depth on the parasitic series resistance of millimeter-wave IMPATT devices based on Silicon.
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Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device
TL;DR: In this article, the effect of junction temperature between 300 and 550 K on the large-signal characteristics of the device for both continuous wave (CW) and pulsed modes of operation was studied.
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Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz
Aritra Acharyya,Jit Chakraborty,Kausik Das,Subir Datta,Pritam De,Suranjana Banerjee,J. P. Banerjee +6 more
TL;DR: In this article, a large-signal (L-S) characterization of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on silicon designed to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies up to 0.5 THz is carried out using an L-S simulation method developed by the authors based on non-sinusoidal voltage excitation (NSVE) model.
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A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots
TL;DR: In this paper, a large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency properties of a 35 GHz SDR Impact Avalanche Transit Time (IMPATT) device have been estimated for different bias current densities.
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Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors
TL;DR: In this paper, a large-signal simulation technique has been developed by incorporating the quantum potentials in the current density equations for the analysis of double-drift region IMPATT devices based on different semiconductors.