Susana Cardoso

Bio: Susana Cardoso is an academic researcher from Instituto Superior Técnico. The author has contributed to research in topics: Magnetoresistance & Tunnel magnetoresistance. The author has an hindex of 44, co-authored 400 publications receiving 7068 citations. Previous affiliations of Susana Cardoso include INESC-ID & University of Valencia.

Study of the dynamic magnetic properties of soft CoFeB films

Abstract: We study the magnetization damping in ion-beam deposited Co72Fe18B10 thin films as a function of film thickness and crystalline state. As-deposited amorphous layers showed low damping (αapp=0.006) that is thickness independent. 40nm Co80Fe20 with no boron content exhibited a value twice higher (αapp=0.013). Crystallization in Co72Fe18B10, triggered by annealing at 280°C, results in increased magnetization as well as a strong increase in damping, by a factor of 5 for 40nm films. For lower thicknesses the damping increase upon annealing is less pronounced. The exchange stiffness constant for amorphous films is deduced from perpendicular standing spin waves to be 28.4×10−12J∕m. The annealing dependence of damping should have consequences for the spin-transfer switching in CoFeB∕MgO∕CoFeB magnetic tunnel junctions.

Interacting ferromagnetic nanoparticles in discontinuous Co 80 Fe 20 /Al 2 O 3 multilayers: From superspin glass to reentrant superferromagnetism

Abstract: Dipolar superferromagnetism with reentrant low-temperature superspin glass behavior is observed on a randomly distributed ferromagnetic nanoparticle systems in discontinuous metal-insulator multilayers $[{\mathrm{Co}}_{80}{\mathrm{Fe}}_{20}(t)/{\mathrm{Al}}_{2}{\mathrm{O}}_{3}(3\mathrm{}\mathrm{n}\mathrm{m}){]}_{10}$ with nominal thickness $1.1l~tl~1.3\mathrm{nm}$ by use of ac susceptometry and dc magnetometry. At $t=1.0\mathrm{nm},$ superspin glass-like freezing is evidenced by the criticality of dynamic and nonlinear susceptibilities.

Vector network analyzer ferromagnetic resonance of thin films on coplanar waveguides: Comparison of different evaluation methods

Abstract: We have carried out two-port network analyzer ferromagnetic resonance measurements on a coplanar waveguide. We present a detailed description on how to calculate from the raw measurement data a value proportional to the complex susceptibility and permittivity of the ferromagnetic material. Necessary corrections for errors due to imprecise sample placement on the waveguide and the sample dimensions are presented. Evaluated data up to 15 GHz are provided for two model samples: a 40 nm Co80Fe20 layer showing a large linewidth (≈900 MHz) and a 40 nm Co72Fe18B10 layer yielding a small linewidth (≈360 MHz). Using these experimental data the presented evaluation scheme based on all four scattering parameters is then compared to commonly used approximate evaluation schemes relying on only one S parameter. These approximate methods show close agreement for the ferromagnetic resonance frequencies (the relative error is below 1%). However, the resonance linewidths show a relative error that can reach 10% in comparis...

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

Abstract: The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕Co20Fe60B20∕Ta pseudo-spin-valve magnetic tunnel junction annealed at 525°C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500°C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeB∕MgO interface. X-ray diffraction measurement of MgO on SiO2 or Co20Fe60B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450°C. The highest TMR ratio observed at 5K was 1144%.

Emerging memories: resistive switching mechanisms and current status.

Abstract: The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.