Sven Moller

Bio: Sven Moller is an academic researcher from Princeton University. The author has contributed to research in topics: Semiconductor & Conductive polymer. The author has an hindex of 4, co-authored 6 publications receiving 948 citations. Previous affiliations of Sven Moller include Hewlett-Packard.

A polymer/semiconductor write-once read-many-times memory

Abstract: Organic devices promise to revolutionize the extent of, and access to, electronics by providing extremely inexpensive, lightweight and capable ubiquitous components that are printed onto plastic, glass or metal foils1,2,3. One key component of an electronic circuit that has thus far received surprisingly little attention is an organic electronic memory. Here we report an architecture for a write-once read-many-times (WORM) memory, based on the hybrid integration of an electrochromic polymer with a thin-film silicon diode deposited onto a flexible metal foil substrate. WORM memories are desirable for ultralow-cost permanent storage of digital images, eliminating the need for slow, bulky and expensive mechanical drives used in conventional magnetic and optical memories. Our results indicate that the hybrid organic/inorganic memory device is a reliable means for achieving rapid, large-scale archival data storage. The WORM memory pixel exploits a mechanism of current-controlled, thermally activated un-doping of a two-component electrochromic conducting polymer.

Micro-lens arrays for display intensity enhancement

Abstract: A microlens array for a light emitting device is disclosed The light emitting device includes a plurality of OLEDs, each OLED having a minimum planar dimension The array includes a plurality of microlenses, each of which has a minimum planar dimension and a maximum planar dimension The minimum planar dimensions of the microlenses are larger than the maximum wavelength of visible light emitted from the OLEDs The maximum planar dimensions of the microlenses are smaller than the smallest minimum planar dimension of any of the OLEDs

Electrochromic conductive polymer fuses for hybrid organic/inorganic semiconductor memories

Abstract: We demonstrate a nonvolatile, write-once-read-many-times (WORM) memory device employing a hybrid organic/inorganic semiconductor architecture consisting of thin film p-i-n silicon diode on a stainless steel substrate integrated in series with a conductive polymer fuse. The nonlinearity of the silicon diodes enables a passive matrix memory architecture, while the conductive polyethylenedioxythiophene:polystyrene sulfonic acid polymer serves as a reliable switch with fuse-like behavior for data storage. The polymer can be switched at ∼2 μs, resulting in a permanent decrease of conductivity of the memory pixel by up to a factor of 103. The switching mechanism is primarily due to a current and thermally dependent redox reaction in the polymer, limited by the double injection of both holes and electrons. The switched device performance does not degrade after many thousand read cycles in ambient at room temperature. Our results suggest that low cost, organic/inorganic WORM memories are feasible for light weight...

Organic-polymer memory element

Abstract: Embodiments of organic-polymer-based memory elements that are stable to repeated READ access operations are disclosed. Organic-polymer-based memory elements can suffer cumulative degradation that occurs over repeated READ access operations due to the introduction of electrons into the organic-polymer layer. In general, entry of electrons into the organic-polymer layer generally lags initiation of a hole current within the organic-polymer layer following application of a voltage potential across the memory elements. Therefore, stable memory elements can be fabricated by introducing electron-blocking layers and/or limiting the duration of applied voltages during READ access operations.

Organic polymer memory device

Abstract: PROBLEM TO BE SOLVED: To provide an organic polymer-based memory device which is stable to iterative read-out access operation. SOLUTION: Generally, an inflow of electrons to an organic polymer layer happens at the time later than the time when a hole current occurs within the organic polymer layer after applying potential to a memory device. Therefore, a stable memory device can be manufactured by introducing an electron stopping layer and/or by limiting applicable voltage time at the time of the read-out access operation. COPYRIGHT: (C)2005,JPO&NCIPI

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Abstract: Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

Abstract: The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Organic light-emitting device

Abstract: The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Complementary resistive switches for passive nanocrossbar memories

Abstract: On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits. As such they represent an interesting alternative to the conventional von Neumann based computer chip architectures. Crossbar architectures hold the promise of a significant reduction in energy consumption because of their ultimate scaling potential and because they allow for a local fusion of logic and memory, thus avoiding energy consumption by data transfer on the chip. However, the expected paradigm change has not yet taken place because the general problem of selecting a designated cell within a passive crossbar array without interference from sneak-path currents through neighbouring cells has not yet been solved satisfactorily. Here we introduce a complementary resistive switch. It consists of two antiserial memristive elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption.