Sven Peters

Bio: Sven Peters is an academic researcher. The author has contributed to research in topics: Quantum cascade laser & Laser. The author has an hindex of 6, co-authored 13 publications receiving 692 citations.

Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride

Abstract: The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54–14.29 μm (700–6500 cm−1). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

Tensile strained GeSn on Si by solid phase epitaxy

Abstract: We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single crystalline GeSn by solid phase epitaxy. Excellent structural quality is demonstrated for layers with up to 6.1% of Sn. The GeSn layers show tensile strain (up to +0.34%), which lowers the difference between direct and indirect band transition and makes this method promising for obtaining direct band gap group IV layers. GeSn with 4.5% Sn shows increased optical absorption compared to Ge and an optical band gap of 0.52 eV.

Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride. Appl. Opt. 51, 6789-6798

Abstract: The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

Broadband multilayer anti-reflection coating for mid-infrared range from 7 μm to 12 μm

Abstract: We describe a design concept for broadband anti-reflection coatings for the mid-infrared that allows thinner film thickness and characterize its properties in the mid-infrared range from 7 μm to 12 μm. Two demonstrator coatings comprising zinc sulfide, yttrium fluoride, and germanium, all of which are deposited by electron beam evaporation on indium phosphide substrates, are optimized for the 7–12 μm and the 10–12 μm ranges. They exhibit less than 1.0% reflection over the target wavelength ranges with notably thin coating thickness.

Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si

Abstract: We have investigated the structural and optical properties of metastable amorphous and crystalline GeSn layers on Si substrates. The as-deposited amorphous layers crystallize during annealing at 500 ◦ C. This transition leads to a significant change in the local environment of the Sn atoms and in the optical properties. The Ge-Sn bond length is decreased after crystallization. The as-deposited GeSn layers, with nominal 4.5% and 11.3% Sn content, do not show Sn segregation. For the crystallized GeSn with nominal 4.5%, the Sn appears to be substitutional, as no Sn clustering was observed. However, for the crystallized GeSn with nominal 11.3% Sn, Sn segration and the presence of β-Sn is observed by EXAFS. A method to suppress Sn segregation and increase the substitutional Sn concentration is discussed. Furthermore, we determined the optical properties of amorphous and crystalline GeSn with nominal 4.5% Sn. The bandgap energy decreases significantly from 0.89 eV (1392 nm) ± 0.05 eV for the amorphous layer to 0.52 eV (2383 nm) ± 0.05 eV for crystalline GeSn, leading to significant reduction in penetration depth. © The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0091412jss] All rights reserved.

A dual-mode textile for human body radiative heating and cooling.

Abstract: Maintaining human body temperature is one of the most basic needs for living, which often consumes a huge amount of energy to keep the ambient temperature constant. To expand the ambient temperature range while maintaining human thermal comfort, the concept of personal thermal management has been recently demonstrated in heating and cooling textiles separately through human body infrared radiation control. Realizing these two opposite functions within the same textile would represent an exciting scientific challenge and a significant technological advancement. We demonstrate a dual-mode textile that can perform both passive radiative heating and cooling using the same piece of textile without any energy input. The dual-mode textile is composed of a bilayer emitter embedded inside an infrared-transparent nanoporous polyethylene (nanoPE) layer. We demonstrate that the asymmetrical characteristics of both emissivity and nanoPE thickness can result in two different heat transfer coefficients and achieve heating when the low-emissivity layer is facing outside and cooling by wearing the textile inside out when the high-emissivity layer is facing outside. This can expand the thermal comfort zone by 6.5°C. Numerical fitting of the data further predicts 14.7°C of comfort zone expansion for dual-mode textiles with large emissivity contrast.

Nonlinear optical effects in epsilon-near-zero media

Abstract: Efficient nonlinear optical interactions are essential for many applications in modern photonics. However, they typically require intense laser sources and long interaction lengths, requirements that often render nonlinear optics incompatible with new nanophotonic architectures in integrated optics and metasurface devices. Obtaining materials with stronger nonlinear properties is a crucial step towards applications that require lower powers and smaller footprints. Recently, a new class of materials with a vanishing permittivity, known as epsilon-near-zero (ENZ) materials, has been reported to exhibit unprecedented ultrafast nonlinear efficiencies within sub-wavelength propagation lengths. In this Review, we survey the work that has been performed on ENZ materials and the related near-zero-index materials, focusing on the observation of various nonlinear phenomena (such as intensity-dependent refraction, four-wave mixing and harmonic generation), the identification of unique field-enhancement mechanisms and the study of non-equilibrium dynamics. Degenerately doped semiconductors (such as tin-doped indium oxide and aluminium-doped zinc oxide) are particularly promising candidates for ENZ-enhanced nonlinear optical applications. We conclude by pointing towards possible future research directions, such as the search for ENZ materials with low optical losses and the elucidation of the mechanisms underlying nonlinear enhancements. Materials with vanishingly small dielectric permittivity, known as epsilon-near-zero materials, enable strong ultrafast optical nonlinear responses within a sub-wavelength propagation length. This Review surveys the various observations of nonlinear phenomena in this class of materials.

Probing the ultimate plasmon confinement limits with a van der Waals heterostructure

Abstract: The ability to confine light into tiny spatial dimensions is important for applications such as microscopy, sensing, and nanoscale lasers. Although plasmons offer an appealing avenue to confine light, Landau damping in metals imposes a trade-off between optical field confinement and losses. We show that a graphene-insulator-metal heterostructure can overcome that trade-off, and demonstrate plasmon confinement down to the ultimate limit of the length scale of one atom. This is achieved through far-field excitation of plasmon modes squeezed into an atomically thin hexagonal boron nitride dielectric spacer between graphene and metal rods. A theoretical model that takes into account the nonlocal optical response of both graphene and metal is used to describe the results. These ultraconfined plasmonic modes, addressed with far-field light excitation, enable a route to new regimes of ultrastrong light-matter interactions.

A Comprehensive Photonic Approach for Solar Cell Cooling

Abstract: The heating of a solar cell has significant adverse consequences on both its efficiency and its reliability. Here to fully exploit the cooling potential of solar cells, we experimentally characterized the thermal radiation and solar absorption properties of current silicon solar cells and, on the basis of such experimental characterization, propose a comprehensive photonic approach by simultaneously performing radiative cooling while also selectively utilizing sunlight. In particular, we design a photonic cooler made of one-dimensional photonic films that can strongly radiate heat through its thermal emission while also significantly reflecting the solar spectrum in the sub-band-gap and ultraviolet regimes. We show that applying this photonic cooler to a solar panel can lower the cell temperature by over 5.7 °C. We also show that this photonic cooler can be used in a concentrated photovoltaic system to significantly reduce the solar cell temperature or required cooling power. This photonic cooler can be r...

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

Abstract: Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform.