T
T. Cabout
Researcher at Commissariat à l'énergie atomique et aux énergies alternatives
Publications - 14
Citations - 361
T. Cabout is an academic researcher from Commissariat à l'énergie atomique et aux énergies alternatives. The author has contributed to research in topics: Voltage & Resistive random-access memory. The author has an hindex of 7, co-authored 12 publications receiving 320 citations.
Papers
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Journal ArticleDOI
Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
Marc Bocquet,Damien Deleruyelle,Hassen Aziza,Christophe Muller,Jean-Michel Portal,T. Cabout,E. Jalaguier +6 more
TL;DR: In this article, a physics-based compact model used in electrical simulator for bipolar OxRAM memories is confronted to experimental electrical data and the excellent agreement with these data suggests that this model can be confidently implemented into circuit simulators for design purpose.
Proceedings ArticleDOI
Experimental and theoretical study of electrode effects in HfO 2 based RRAM
C. Cagli,J. Buckley,Vincent Jousseaume,T. Cabout,Anne-Claire Salaün,H. Grampeix,J. F. Nodin,H. Feldis,A. Persico,J. Cluzel,Paolo Lorenzi,L. Massari,Rosario Rao,Fernanda Irrera,F. Aussenac,C. Carabasse,M. Coue,P. Calka,Eugénie Martinez,L. Perniola,P. Blaise,Zheng Fang,Y. H. Yu,Gerard Ghibaudo,Damien Deleruyelle,Marc Bocquet,Ch. Muller,Andrea Padovani,Onofrio Pirrotta,Luca Vandelli,Luca Larcher,G. Reimbold,B. De Salvo +32 more
TL;DR: In this article, the role of TiN/Ti electrodes is explained and modeled based on the presence of HfO x interfacial layer underneath the electrode, which strongly reduces forming and switching voltages with respect to Pt-Pt devices.
Proceedings ArticleDOI
Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al 2 O 3 /CuTeGe conductive bridge RAM (CBRAM)
J. Guy,G. Molas,E. Vianello,F. Longnos,S. Blanc,C. Carabasse,Mathieu Bernard,J. F. Nodin,A. Toffoli,J. Cluzel,P. Blaise,P. Dorion,O. Cueto,H. Grampeix,E. Souchier,T. Cabout,P. Brianceau,V. Balan,A. Roule,Sylvain Maitrejean,L. Perniola,B. De Salvo +21 more
TL;DR: In this article, an experimental and theoretical analysis of scaled (down to 10nm) Al2O3/CuTeGe based CBRAM is presented, focusing on the physical mechanisms responsible for the failure of high and low resistance states at high temperature.
Proceedings ArticleDOI
Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO 2 -RRAM integrated in a 65nm CMOS technology
T. Diokh,Elise Le-Roux,S. Jeannot,Mickael Gros-Jean,Philippe Candelier,J. F. Nodin,Vincent Jousseaume,L. Perniola,H. Grampeix,T. Cabout,E. Jalaguier,M. Guillermet,B. De Salvo +12 more
TL;DR: In this article, the effects of the oxide thickness and RESET conditions on disturb immunity of the High-Resistance State (HRS) are explored, and the conduction mechanism of the HRS is correlated to the failure/SET process of the RRAM device through a voltage acceleration model.
Journal ArticleDOI
Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory
T. Cabout,Julien Buckley,C. Cagli,Vincent Jousseaume,J. F. Nodin,B. De Salvo,Marc Bocquet,Christophe Muller +7 more
TL;DR: In this paper, the role of platinum or titanium-titanium nitride electrodes on variability of resistive switching characteristics and electrical performances of HfO2-based memory elements was investigated.