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T. Dutta

Bio: T. Dutta is an academic researcher. The author has contributed to research in topics: Field-effect transistor. The author has an hindex of 1, co-authored 1 publications receiving 3 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, the authors derived the expressions for the gate capacitance in quantum MOSFET devices manufactured from completely different technologically vital nonstandard materials by formulating the 2D electron statistics under very low temperature so that the Fermi function tends to unity.
Abstract: The Heisenberg's scientific theory of quantum science since its beginning has been proved to be instrumental in unlocking varied vital quantum phenomena. In what follows the Heisenberg's scientific theory has been used to derive the expressions for the gate capacitance in Quantum MOSFET Devices manufactured from completely different technologically vital nonstandard materials by formulating the 2D electron statistics under very low temperature so that the Fermi function tends to unity. For numerical computations we take Cd3As2, the best quality very high mobility semiconductor and non-linear optical (e.g., CdGeAs2) compounds from which quantum MOSFET devices are made of by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the frame work of Kane's matrix methodology that successively generates new two dimensional electron energy versus wave vector relation for both low and very large externally applied electric field of force respectively. Under many special conditions, the corresponding statistics and therefore the gate capacitance for the quantum MOSFETs, whose e–ks equation (e is carrier energy and ks is the 2D wave vector) are defined by various models of III–V semiconducting samples originally derived by Kane create special cases of our extended formalism. It's been found taking quantum MOSFETs of CdGeAs2, InAs, InSb, Hg1–xCdxTe and In1–xGaxAs yP1–y lattice matched to InP that the gate capacitance at the electrical quantum limit will exhibit monotonic increasing function with changing field at the surface, the applied voltage at the gate for each of the compounds and therefore the actual results have one to one correspondence with the energy band constants showing an inclination of asymptotic results at comparatively large values of the independent variables for all the cases. The gradient rates for all curves change from one material to a different material. With decreasing alloy composition, the gate capacitance will increase for each of quantum confined MOSFETs made of various alloy compounds. For the aim of coherent presentation we've got conjointly planned the periodical Fermi energy at high field of force limits and gate voltage for few quantum confined MOSFETs.

4 citations


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Book ChapterDOI
01 Jan 2022
TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.
Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations

Book ChapterDOI
01 Jan 2022
TL;DR: In this paper, the carrier contribution to the 2nd and 3rd order elastic constants in opto-electronic materials in terahertz frequency by taking the bulk of various optoelectronic compounds was studied.
Abstract: In this chapter, we study the carrier contribution to the 2nd and 3rd order elastic constants (\(\phi_{1}\) and \(\phi_{2}\)) in opto-electronic materials in terahertz frequency by taking the bulk of various opto-electronic compounds. The influence of magnetic quantization, 1D quantization and 2D quantization has also been studied in this context. It appears that both \(\phi_{1}\) and \(\phi_{2}\) changes with wave length, intensity, electron statistics, alloy composition and nano thickness in different ways for all the opto-electronic compounds as considered here and the influence of quantization of band state is also being apparent from all the figures.

3 citations

Book ChapterDOI
01 Jan 2021
TL;DR: In this article, the carrier statistics in quantized extremely degenerate III-V, ternary, quaternary and tetragonal compounds were studied and the influence of photo-excitation and electric field on the Fermi energy was investigated.
Abstract: In this chapter, we study the carrier statistics (CS) in quantized extremely degenerate III–V, ternary, quaternary and tetragonal compounds respectively. We have also investigated the influence of photo-excitation and electric field on the Fermi energy. We note by taking various types of opto-electronic materials as examples that the Fermi energy oscillates with inverse magnetic field due to SdH effect, changes with changing electric field, light intensity, wave length and alloy composition in different ways which are totally energy band constants dependent.