We show that microstructures built from nonmagnetic conducting sheets exhibit an effective magnetic permeability /spl mu//sub eff/, which can be tuned to values not accessible in naturally occurring materials, including large imaginary components of /spl mu//sub eff/. The microstructure is on a scale much less than the wavelength of radiation, is not resolved by incident microwaves, and uses a very low density of metal so that structures can be extremely lightweight. Most of the structures are resonant due to internal capacitance and inductance, and resonant enhancement combined with compression of electrical energy into a very small volume greatly enhances the energy density at critical locations in the structure, easily by factors of a million and possibly by much more. Weakly nonlinear materials placed at these critical locations will show greatly enhanced effects raising the possibility of manufacturing active structures whose properties can be switched at will between many states.

/pdf/magnetism-from-conductors-and-enhanced-nonlinear-phenomena-2fpnoamwae.pdf

Magnetism from conductors and enhanced nonlinear phenomena

Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Photonic crystals are materials patterned with a periodicity in dielectric constant, which can create a range of 'forbidden' frequencies called a photonic bandgap. Photons with energies lying in the bandgap cannot propagate through the medium. This provides the opportunity to shape and mould the flow of light for photonic information technology.

Photonic crystals: putting a new twist on light

Ingredients. A Phenomenological Approach to Diode Lasers. Mirrors and Resonators for Diode Lasers. Gain and Current Relations. Dynamic Effects. Perturbation and Coupled--Mode Theory. Dielectric Waveguides. Photonic Integrated Circuits. Appendices. Index.

Diode Lasers and Photonic Integrated Circuits

This article reviews the progress of atomic force microscopy in ultrahigh vacuum, starting with its invention and covering most of the recent developments. Today, dynamic force microscopy allows us to image surfaces of conductors and insulators in vacuum with atomic resolution. The most widely used technique for atomic-resolution force microscopy in vacuum is frequency-modulation atomic force microscopy (FM-AFM). This technique, as well as other dynamic methods, is explained in detail in this article. In the last few years many groups have expanded the empirical knowledge and deepened our theoretical understanding of frequency-modulation atomic force microscopy. Consequently spatial resolution and ease of use have been increased dramatically. Vacuum atomic force microscopy opens up new classes of experiments, ranging from imaging of insulators with true atomic resolution to the measurement of forces between individual atoms.

https://hep.physics.utoronto.ca/WilliamTrischuk/courses/phy189/AFM_revmodphys.pdf

Advances in atomic force microscopy

We introduce a practical, new, face-centered-cubic dielectric structure which simultaneously solves two of the outstanding problems in photonic band structure. In this new ``photonic crystal'' the atoms are nonspherical, lifting the degeneracy at the W point of the Brillouin zone, and permitting a full photonic band gap rather than a pseudogap. Furthermore, this fully three-dimensional fcc structure lends itself readily to microfabrication on the scale of optical wavelengths. It is created by simply drilling three sets of holes 35.26\ifmmode^\circ\else\textdegree\fi{} off vertical into the top surface of a solid slab or wafer, as can be done, for example, by chemical-beam-assisted ion etching.

Photonic band structure: The face-centered-cubic case employing nonspherical atoms.

There is a significant gap between the internal efficiency of light‐emitting diodes (LEDs) and their external efficiency. The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. We have found that by separating thin‐film LEDs from their substrates (by epitaxial lift‐off, for example), it is much easier for light to escape from the LED structure and thereby avoid absorption. Moreover, by nanotexturing the thin‐film surface using ‘‘natural lithography,’’ the light ray dynamics becomes chaotic, and the optical phase‐space distribution becomes ‘‘ergodic,’’ allowing even more of the light to find the escape cone. We have demonstrated 30% external efficiency in GaAs LEDs employing these principles.

30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes

We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111g is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.

Unusually low surface-recombination velocity on silicon and germanium surfaces.

We have discovered conditions for the selective lift‐off of large area epitaxial AlxGa1−xAs films from the substrate wafers on which they were grown. A 500‐A‐thick AlAs release layer is selectivity etched away, leaving behind a high‐quality epilayer and a reusable GaAs substrate. We have measured a selectivity of ≳107 between the release layer and Al0.4Ga0.6As. This process relies upon the creation of a favorable geometry for the outdiffusion of dissolved H2 gas from the etching zone.

Extreme selectivity in the lift‐off of epitaxial GaAs films

Three-dimensionally periodic dielectric structures, photonic crystals, possessing a forbidden gap for electromagnetic wave propagation, a photonic band gap, are now known. If the perfect 3D periodicity is broken by a local defect, local electromagnetic modes can occur within the forbidden band gap. Addition of extra dielectric material locally, inside the photonic crystal, produces ``donor'' modes. Conversely, local removal of dielectric material from the crystal produces ``acceptor'' modes. It is now possible to make high-Q electromagnetic cavities of \ensuremath{\sim}1 cubic wavelength, for short wavelengths at which metallic cavities are useless. These new dielectric cavities can cover the range from mm waves to UV wavelengths.

T. J. Gmitter

Papers

Photonic band structure: The face-centered-cubic case employing nonspherical atoms.

30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes

Unusually low surface-recombination velocity on silicon and germanium surfaces.

Extreme selectivity in the lift‐off of epitaxial GaAs films

Donor and acceptor modes in photonic band structure.