Author
T. Nenadović
Bio: T. Nenadović is an academic researcher. The author has contributed to research in topics: Sputtering & Dielectric. The author has an hindex of 3, co-authored 3 publications receiving 22 citations.
Papers
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TL;DR: In this paper, the adhesion and microhardness of TiN layers were measured for layers deposited onto dur-Al and various steel substrates, and the total increase in surface hardness was found to be up to 430% or even 1100% for layers 7.5 μm thick.
11 citations
TL;DR: In this article, the electrical and structural properties of flash-evaporated 70wt.%Cr-30wt.%.SiO cermet films were investigated and it was found that the electrical properties depend on the deposition conditions, thickness of the films, substrate roughness and post-deposition thermal treatment.
7 citations
TL;DR: In this article, an experimental technique was applied to develop the topographic evolution of cylindrical geometry solids produced by Ar + ion bombardment, and the cross-section profile variations of amorphous and crystaline cylinders were examined as a function of the sputtering rate and bombardment dose.
4 citations
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TL;DR: In this article, a new model relating the mechanical properties of the coating and substrate materials to the experimentally observed hardness-indentation size behavior is presented and the information resulting from this approach is discussed.
346 citations
TL;DR: In this article, the adhesion of physical vapour deposition coatings to aluminium substrate has been evaluated using a modified test similar to the scratch hardness method, which relies on the development of a number of scratches of different width on the coated surface produced at a range of loads.
Abstract: In this study the adhesion of physical vapour deposition coatings to aluminium substrate has been evaluated using a modified test similar to the scratch hardness method. The technique relies on the development of a number of scratches of different width on the coated surface produced at a range of loads. Metallic titanium and titanium nitride coatings of different thicknesses were deposited by a PVD technique. The effect of coating structure, process parameters, and the presence of an interlayer between the coating and the substrate was investigated. Experimental data show that the technique can be used to evaluate the adhesion of PVD coatings to aluminium substrates. The sensitivity of the test method is sufficiently high to characterise between coatings produced under different conditions, but the interpretation of the results is not always straightforward. Comparison of the results indicate that the method could provide useful information on coating performance, although it suffers from many problems associated with the critical load in the conventional scratch adhesion test.
47 citations
Patent•
19 Jul 1994
TL;DR: In this article, a process for increasing the sheet resistance and lowering the temperature coefficient of resistance of a thin film resistor deposited on a wafer is described. But this process is restricted to a single wafer.
Abstract: A process for increasing the sheet resistance and lowering the temperature coefficient of resistance of a thin film resistor deposited on a wafer, the process comprising ramping the temperature of the wafer to an annealing temperature above the decomposition temperature of the thin film resistor using a radiant heat source such that the wafer reaches the annealing temperature within a ramp up time of from about 5 to 10 seconds, and annealing the wafer at the annealing temperature for an annealing period of from about 50 to 85 seconds.
24 citations
TL;DR: In this paper, the aging behavior of resistive resistive films with film composition Cr 42 Si 56 W 2 O (W 2 O ) has been investigated as a function of the annealing conditions, aging time, storage temperature, film thickness, additional current flow, moist atmosphere and protective layer.
19 citations
TL;DR: In this paper, annealed TiN thin films were grown on stainless steel substrates by using the reactive radiofrequency magnetron-sputtering technique at relatively low temperature (∼200°C) using Ti and N2.
18 citations