Silicon has long been established as the material of choice for the microelectronics industry. This is not yet true in photonics, where the limited degrees of freedom in material design combined with the indirect bandgap are a major constraint. Recent developments, especially those enabled by nanoscale engineering of the electronic and photonic properties, are starting to change the picture, and some silicon nanostructures now approach or even exceed the performance of equivalent direct-bandgap materials. Focusing on two application areas, namely communications and photovoltaics, we review recent progress in silicon nanocrystals, nanowires and photonic crystals as key examples of functional nanostructures. We assess the state of the art in each field and highlight the challenges that need to be overcome to make silicon a truly high-performing photonic material.

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Silicon nanostructures for photonics and photovoltaics

The application of portable, easy-to-use and highly sensitive lab-on-a-chip biosensing devices for real-time diagnosis could offer significant advantages over current analytical methods. Integrated optics-based biosensors have become the most suitable technology for lab-on-chip integration due to their ability for miniaturization, their extreme sensitivity, robustness, reliability, and their potential for multiplexing and mass production at low cost. This review provides an extended overview of the state-of-the-art in integrated photonic biosensors technology including interferometers, grating couplers, microring resonators, photonic crystals and other novel nanophotonic transducers. Particular emphasis has been placed on describing their real biosensing applications and wherever possible a comparison of the sensing performances between each type of device is included. The way towards achieving operative lab-on-a-chip platform incorporating the photonic biosensors is also reviewed. Concluding remarks regarding the future prospects and potential impact of this technology are also provided.

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Integrated optical devices for lab-on-a-chip biosensing applications

Abstract The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Mid-infrared integrated photonics on silicon: a perspective

DOI: 10.1002/adom.201801433 Scientific American selects plasmonic sensing as the top 10 emerging technologies of 2018.[15] Almost every single new plasmonic or photonic structure would be explored to test its sensing ability.[16–29] These works tend to report the sensing performance of their own structure. Some declare that their sensitivity breaks the world record. However, there is still a missing literature on what the world record really is, the gap between the experiments and the theoretical limit, as well as the differences between metal-based plasmonic sensors and dielectric-based photonic sensors. To push plasmonic and photonic sensors into industrial applications, an optical sensing technology map is absolutely necessary. This review aims to cover a wide range of most representative plasmonic and photonic sensors, and place them into a single map. The sensor performances of different structures will be distinctly illustrated. Future researchers could plot the sensing ability of their new sensors into this technology map and gauge their performances in this field. In this review, we focus on optical refractive index (RI) sensors with no fluorescent labeling required. We will utilize two parameters to characterize and compare the performance of optical RI sensors: sensitivity to RI change (denoted by symbol SRI) and figure of merit (in short, FoM). For simplicity, we restrict our discussions to bulk RI change, where the change in RI occurs within the whole sample. There is another case where the RI variation occurs only within a very small volume close to the sensor surface. This surface RI sensitivity is proportional to the bulk RI sensitivity, the ratio of the thickness of the layer within which the surface RI variation occurs, and the penetration depth of the optical mode.[6] The bulk RI sensitivity defines the ratio of the change in sensor output (e.g., resonance angle, intensity, or resonant wavelength) to the bulk RI variations. Here, we limit our discussions to the spectral interrogations and the bulk RI sensitivity SRI is given by[3,5–7,30]

Optical Refractive Index Sensors with Plasmonic and Photonic Structures: Promising and Inconvenient Truth

We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

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Last Advances in Silicon-Based Optical Biosensors.

The strong correlation between advancing the performance of Si microelectronics and their demand of low power consumption requires new ways of data communication. Photonic circuits on Si are already highly developed except for an eligible on-chip laser source integrated monolithically. The recent demonstration of an optically pumped waveguide laser made from the Si-congruent GeSn alloy, monolithical laser integration has taken a big step forward on the way to an all-inclusive nanophotonic platform in CMOS. We present group IV microdisk lasers with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry–Perot type lasers. Lasing is observed up to 130 K with optical excitation density threshold of 220 kW/cm2 at 50 K. Additionally the influence of strain relaxation on the band structure of undercut resonators is discussed and allows the proof of laser emission for a just direct Ge0.915Sn0.085 alloy where Γ and L valleys have the same energies....

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Optically Pumped GeSn Microdisk Lasers on Si

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.

Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 μm wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using reduced pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 μm and 3.1 μm wavelengths, respectively. For the longest wavelength (i.e., 3.1 μm), lasing behavior was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

The authors present the fabrication and optical investigation of silicon on insulator photonic crystal drop filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1−r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity mode frequency between input and output waveguides. Optical characterization of the structures in air and various liquids demonstrates detectivities in excess of Δn/n=0.018 and Δn/n=0.006 for the H1−r and L3 cavities, respectively. The measured cavity frequencies and detector refractive index responsivities are in good agreement with simulations, demonstrating that the method provides a background free transducer signal with frequency selective addressing of a specific area of the sensor chip.

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Silicon photonic crystal nanostructures for refractive index sensing

The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: The idea is to integrate fully compatible group IV materials with equally favorable optical properties as the chemically incompatible group III-V-based systems The concept involves either mechanically applied strain on Ge or alloying of Ge with Sn and permits to drastically improve the insufficient radiative efficiency of Ge The favorable optical properties result from a modified band structure transformed from an indirect to a direct one The first demonstration of such a direct band gap laser, accomplished in GeSn, exemplifies the capability of this new concept These systems may permit a qualitative as well as a quantitative expansion of Si-photonics into traditional but also new areas of applications, provided they can be operated energy efficiently, under ambient conditions and integrated with current Si technologies This review aims to discuss the challenges along this path in terms of fabrication, characterization and fundamental understanding, and will elaborate on evoking opportunities of this new class of group IV-based laser materials

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T. Zabel

Papers

Optically Pumped GeSn Microdisk Lasers on Si

Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

Silicon photonic crystal nanostructures for refractive index sensing

Group IV direct band gap photonics: Methods, Challenges and Opportunities