Tae-Woong Kim

Bio: Tae-Woong Kim is an academic researcher from Samsung. The author has contributed to research in topics: Thin-film transistor & Layer (electronics). The author has an hindex of 23, co-authored 84 publications receiving 2613 citations. Previous affiliations of Tae-Woong Kim include Kyung Hee University.

65.2: Distinguished Paper: World-Largest (6.5”) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties

Abstract: The world largest flexible full color 6.5-inch active matrix organic light emitting diode (AMOLED) display with top emission mode on plastic film is demonstrated. The active matrix backplanes were fabricated using metal oxide thin film transistors (TFTs). The n-channel metal oxide TFTs on plastic film exhibited field-effect mobility of 17.8 cm2/Vs, threshold voltage of 0.4 V, on/off ratio of 1.1× 108, and subthreshold slope of 0.34 V/dec. These TFT performance characteristics made it possible to integrate scan driver circuit, demux switching and compensation circuit on the panel. Bending tests were performed with TFT backplane samples to determine critical curvature radius to which the panel can be bent without TFT performance degradation. The results were compared with the calculations that took into account thicknesses and mechanical constants of flexible substrate and of thin-film layers in AMOLED device.

Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

Abstract: We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R=3 mm under tension and compression without any performance degradation.

The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

Abstract: We investigated the threshold voltage (Vth) instability for various gate dielectrics (SiNx and SiOx) in amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). The a-IGZO TFTs with SiNx 150 °C exhibited reasonable electrical performance (field-effect mobility of 8.1 cm2/V s and Ion/off ratio of >108) but showed huge Vth shift under positive gate bias. The TFTs with SiOx dielectrics exhibit smaller Vth instability than those of SiNx dielectrics. This behavior can be explained by using simple charge trapping into the gate insulators and the difference of Vth instability on various dielectrics may be originated from the hydrogen contents, providing high density of charge traps in gate dielectrics.

Roll-to-roll slot-die coating of 400 mm wide, flexible, transparent Ag nanowire films for flexible touch screen panels

Abstract: We report fabrication of large area Ag nanowire (NW) film coated using a continuous roll-to-roll (RTR) slot die coater as a viable alternative to conventional ITO electrodes for cost-effective and large-area flexible touch screen panels (TSPs). By controlling the flow rate of shear-thinning Ag NW ink in the slot die, we fabricated Ag NW percolating network films with different sheet resistances (30–70 Ohm/square), optical transmittance values (89–90%), and haze (0.5–1%) percentages. Outer/inner bending, twisting, and rolling tests as well as dynamic fatigue tests demonstrated that the mechanical flexibility of the slot-die coated Ag NW films was superior to that of conventional ITO films. Using diamond-shape patterned Ag NW layer electrodes (50 Ohm/square, 90% optical transmittance), we fabricated 12-inch flexible film-film type and rigid glass-film-film type TSPs. Successful operation of flexible TSPs with Ag NW electrodes indicates that slot-die-coated large-area Ag NW films are promising low cost, high performance, and flexible transparent electrodes for cost-effective large-area flexible TSPs and can be substituted for ITO films, which have high sheet resistance and are brittle.

Stretchable Ag electrodes with mechanically tunable optical transmittance on wavy-patterned PDMS substrates

Abstract: We report on semi-transparent stretchable Ag films coated on a wavy-patterned polydimethylsiloxane (PDMS) substrate for use as stretchable electrodes for stretchable and transparent electronics. To improve the mechanical stretchability of the Ag films, we optimized the wavy-pattern of the PDMS substrate as a function of UV-ozone treatment time and pre-strain of the PDMS substrate. In addition, we investigated the effect of the Ag thickness on the mechanical stretchability of the Ag electrode formed on the wavy-patterned PDMS substrate. The semi-transparent Ag films formed on the wavy-patterned PDMS substrate showed better stretchability (strain 20%) than the Ag films formed on a flat PDMS substrate because the wavy pattern effectively relieved strain. In addition, the optical transmittance of the Ag electrode on the wavy-patterned PDMS substrate was tunable based on the degree of stretching for the PDMS substrate. In particular, it was found that the wavy-patterned PDMS with a smooth buckling was beneficial for a precise patterning of Ag interconnectors. Furthermore, we demonstrated the feasibility of semi-transparent Ag films on wavy-patterned PDMS as stretchable electrodes for the stretchable electronics based on bending tests, hysteresis tests, and dynamic fatigue tests.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Organic light-emitting device

Abstract: The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Semiconductor device and display device

Abstract: An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.