Taiuk Rim

TL;DR: The pH responses of the ISFETs with different pH solutions were characterized at room temperature which showed a clear lateral shift of the drain current vs. gate voltage curve with a change in the pH value of the solution and a sensitivity of 40 mV pH(-1).

TL;DR: The total reflection on the sidewalls is seen to increase the light trapping path and charge carrier generation in the radial junction of the asymmetric SiNW, yielding high external quantum efficiency and short circuit current density.

TL;DR: The first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) is reported and the strong influence of doping concentrations on the nonconventional optical switching of the devices is demonstrated.

TL;DR: This work presents the application of nano technology for the development of miniaturized bio-nanosensors that are able to communicate and exchange information about sensed molecules or chemical compound concentration and therefore draw a global response in the case of health anomalies.

TL;DR: A novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability in gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film.