Takaaki Suzuki

Bio: Takaaki Suzuki is an academic researcher from Hitachi. The author has contributed to research in topics: Oxide & Layer (electronics). The author has an hindex of 14, co-authored 144 publications receiving 843 citations. Previous affiliations of Takaaki Suzuki include Sony Broadcast & Professional Research Laboratories & Kagawa University.

Superconductivity of Tl-Sr-Ca-Cu-O System in Relation to Tl-Ba-Ca-Cu-O and Bi-Sr-Ca-Cu-O Systems

Abstract: It was found that Tl-Sr-Ca-Cu-O system gives rise to at least two superconducting phases, a high Tc phase at 100K and a low Tc phase at about 75K. The two phases are isostructural to those of Bi Sr-Ca-Cu-0 System. Comparing the Tc’s and crystal structures of the Tl and Bi systems, it was suggested that Tc is mainly determined by the combination of two alkaline earth elements, i.e., Sr/Ca vs Ba/Ca, when the repetition unit in the layered perovskites is equal.

Toughening of Silicon Nitride Matrix Composites by the Addition of Both Silicon Carbide Whiskers and Silicon Carbide Particles

Abstract: Si3N4 matrix composites reinforced by SiC whiskers, SiC particles, or both were fabricated using the hot-pressing technique. The mechanical properties of the composites containing various amounts of these SiC reinforcing materials and different sizes of SiC particles were investigated. Fracture toughness of the composites was significantly improved by introducing SiC whiskers and particles together, compared with that obtained by adding SiC whiskers or SiC particles alone. On increasing the size of the added SiC particles, the fracture toughness of the composites reinforced by both whiskers and particles was increased. Their fracture toughness also showed a strong dependence on the amount of SiC particles (average size 40 μm) and was a maximum at the particle content of 10 vol%. The maximum fracture toughness of these composites was 10.5 MPa·m1/2 and the flexural strength was 550 MPa after addition of 20 vol% of SiC whiskers and 10 vol% of SiC particles having an average particle size of 40 μm. These mechanical properties were almost constant from room temperature to temperatures around 1000°C. Fracture surface observations revealed that the reinforcing mechanisms acting in these composites were crack deflection and crack branching by SiC particles and pullout of SiC whiskers.

Ferroelectric element and method of producing the same

Abstract: A ferroelectric element is provided that can be highly densely integrated having a high Pr and a small Ec by using a ferroelectric thin film of the perovskite structure. A large distortion is imparted to the crystalline lattices of a ferroelectric thin film of the perovskite structure by using in combination elements having dissimilar ionic radii for the A-site that constitutes crystalline lattices, for the B-site and for the C-site that produces polarization, in order to obtain a ferroelectric element of a structure in which the ferroelectric thin film exhibiting a high spontaneous polarization and a small coersive electric field is sandwiched by the electrodes.

Non-aqueous electrolyte secondary battery

Abstract: A long-life battery whose properties do not deteriorate after charge-discharges cycles is provided. A non-aqueous electrolyte secondary battery includes a cathode, an anode, and a non-aqueous electrolytic solution containing an electrolyte. At least one of the cathode and the anode includes a binder. The binder includes a layer having electron conductivity on a surface thereof. The binder improves the contact property between particles of the active materials of the battery and the conductivity in the electrode without impairing the binding property of the binder. Preferably, the binder includes a metal on the surface thereof and the metal does not form an alloy with lithium to further improve the lifetime of the battery.

Dielectric element and manufacturing method therefor

Abstract: A thin ferroelectric element which has high Pr, low Ec, and excellent pressure resistance is to be provided by using a ferroelectric layer containing insulating particles. By causing the ferroelectric layer to contain insulating particles, a leakage current generated through the grain boundary of a crystal may be restrained. Thus, the element may be utilized as a ferroelectric element having a structure in which the thinned ferroelectric layer having high Pr, low Ec and excellent pressure resistance is sandwiched by electrodes. By embedding the ferroelectric element into a field-effect transistor structure, a semiconductor device of a ferroelectric element having a high degree of integration for detecting reading and writing may be realized.

Semiconductor memory device

Abstract: PROBLEM TO BE SOLVED: To enable mixed mounting with a highly efficient electrical body capacitative element and a highly efficient logic circuit, by forming a dielectrics capacitative element of perovskite structure at low temperature, as well as by suppressing characteristic fluctuation and characteristics degradation of an integrated circuit. SOLUTION: In Pb-based perovskite dielectrics capacitative element, a mixing layer is so constituted that Ru is diffused in an LaNiO 3 -based film in order to raise adhesiveness of an Ru-based layer to the interface of the LaNiO 3 -based film, using lower electrodes wherein perovskite type conductivity oxide LaNiO 3 and Ru which is noble metal are laminated, and moreover the orientation degree of Ru (002) is 90% or more, and LaNiO 3 has a preference orientation degree (100), so that the orientation and grain size of a PZT film are controlled. Thus, the PZT film excellent in flatness and orientation is obtained. COPYRIGHT: (C)2005,JPO&NCIPI

Light-emitting device and method of manufacturing the same

Abstract: Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer (33) formed of a metal between a semiconductor layer (20) and a bonding substrate (31). When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

Abstract: A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (40) on the seed layer (20;20').

Semiconductor device and manufacturing method therefor

Abstract: An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel forming region become longer. The first impurity region is formed to be overlapped with a side wall. A gate overlapping structure can be realized with the side wall functioning as an electrode.

Method for Manufacturing Semiconductor Device

Abstract: An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film