Takashi Kimura

Bio: Takashi Kimura is an academic researcher from Kyushu University. The author has contributed to research in topics: Spin polarization & Magnetization. The author has an hindex of 39, co-authored 330 publications receiving 7554 citations. Previous affiliations of Takashi Kimura include Osaka University & Waseda University.

Room-temperature reversible spin Hall effect.

Abstract: Reversible spin Hall effect comprising the direct and inverse spin Hall effects was electrically detected at room temperature. A platinum wire with a strong spin-orbit interaction is used not only as a spin current absorber but also as a spin-current source in the specially designed lateral structure. The obtained spin Hall conductivities are $2.4\ifmmode\times\else\texttimes\fi{}{10}^{4}\text{ }\text{ }(\ensuremath{\Omega}\mathrm{m}{)}^{\ensuremath{-}1}$ at room temperature, ${10}^{4}$ times larger than the previously reported values of semiconductor systems. Spin Hall conductivities obtained from both the direct and inverse spin Hall effects are experimentally confirmed to be the same, demonstrating the Onsager reciprocal relations between spin and charge currents.

Breaking the 10 nm barrier in hard-X-ray focusing

Abstract: X-ray sources such as free-electron lasers offer the potential to study matter at unprecedented spatial and temporal resolution. But that potential is limited by the poor quality of conventional X-ray optical elements. An in situ technique that corrects for wavefront aberrations and allows X-rays to be focused to a spot just 7 nm wide could provide a solution.

Insulator-to-Metal Crossover in the Normal State of La 2 − x Sr x CuO 4 Near Optimum Doping

Abstract: A 61-T pulsed magnetic field suppresses superconductivity in ${\mathrm{La}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{CuO}}_{4}$ single crystals and reveals an insulator-to-metal (IM) crossover for both in-plane resistivity ${\ensuremath{\rho}}_{\mathrm{ab}}$ and $c$-axis resistivity ${\ensuremath{\rho}}_{c}$ at a Sr concentration near optimum doping ( $x\ensuremath{\simeq}0.16$). The IM transition is unusual in that all underdoped samples ( $xl0.16$) show low-temperature insulating behavior, even in samples with linear- $T$ ${\ensuremath{\rho}}_{\mathrm{ab}}$ above ${T}_{c}$ and apparently large ${k}_{F}l$.

Indication of intrinsic spin Hall effect in 4d and 5d transition metals

Abstract: We have investigated spin Hall effects in 4$d$ and 5$d$ transition metals, Nb, Ta, Mo, Pd, and Pt, by incorporating the spin absorption method in the lateral spin valve structure, where large spin current preferably relaxes into the transition metals, exhibiting strong spin-orbit interactions. Thereby nonlocal spin valve measurements enable us to evaluate their spin Hall conductivities. The sign of the spin Hall conductivity changes systematically depending on the number of $d$ electrons. This tendency is in good agreement with the recent theoretical calculation based on the intrinsic spin Hall effect.

Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching

Abstract: A key element in spintronics is the spin-transfer effect, by which the magnetization in a nanomagnet can be switched. The effect has already been demonstrated using spin-polarized electrical currents, but now reversible magnetization switching has been achieved using a pure, chargeless spin current. A number of proposed next-generation electronic devices, including novel memory elements1 and versatile transistor circuits2, rely on spin currents, that is, the flow of electron angular momentum. A spin current may interact with a magnetic nanostructure and give rise to spin-dependent transport phenomena, or excite magnetization dynamics1,2,3,4,5,6,7,8,9,10,11. In contrast to a spin-polarized charge current, a pure spin current does not produce any charge-related spurious effects12,13. One way to produce a pure spin current is non-local electrical-spin injection12,13,14,15,16,17,18, but this approach has suffered so far from low injection efficiency. Here, we demonstrate a significant enhancement of the non-local injection efficiency in a lateral spin valve prepared with an entirely in situ fabrication process. Improvements to the interface quality and the device structure lead to an increase of the spin-signal amplitude by an order of magnitude. The generated pure spin current enables the magnetization reversal of a nanomagnet with the same efficiency as in the case of using charge currents. These results are important for further theoretical developments in multi-terminal structures2, but also with a view towards realizing novel devices driven by pure spin currents.

Berry phase effects on electronic properties

Abstract: Ever since its discovery, the Berry phase has permeated through all branches of physics. Over the last three decades, it was gradually realized that the Berry phase of the electronic wave function can have a profound effect on material properties and is responsible for a spectrum of phenomena, such as ferroelectricity, orbital magnetism, various (quantum/anomalous/spin) Hall effects, and quantum charge pumping. This progress is summarized in a pedagogical manner in this review. We start with a brief summary of necessary background, followed by a detailed discussion of the Berry phase effect in a variety of solid state applications. A common thread of the review is the semiclassical formulation of electron dynamics, which is a versatile tool in the study of electron dynamics in the presence of electromagnetic fields and more general perturbations. Finally, we demonstrate a re-quantization method that converts a semiclassical theory to an effective quantum theory. It is clear that the Berry phase should be added as a basic ingredient to our understanding of basic material properties.

Spin-torque switching with the giant spin hall effect of tantalum

Abstract: Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.

Angle-resolved photoemission studies of the cuprate superconductors

Abstract: The last decade witnessed significant progress in angle-resolved photoemission spectroscopy (ARPES) and its applications. Today, ARPES experiments with 2-meV energy resolution and $0.2\ifmmode^\circ\else\textdegree\fi{}$ angular resolution are a reality even for photoemission on solids. These technological advances and the improved sample quality have enabled ARPES to emerge as a leading tool in the investigation of the high-${T}_{c}$ superconductors. This paper reviews the most recent ARPES results on the cuprate superconductors and their insulating parent and sister compounds, with the purpose of providing an updated summary of the extensive literature. The low-energy excitations are discussed with emphasis on some of the most relevant issues, such as the Fermi surface and remnant Fermi surface, the superconducting gap, the pseudogap and $d$-wave-like dispersion, evidence of electronic inhomogeneity and nanoscale phase separation, the emergence of coherent quasiparticles through the superconducting transition, and many-body effects in the one-particle spectral function due to the interaction of the charge with magnetic and/or lattice degrees of freedom. Given the dynamic nature of the field, we chose to focus mainly on reviewing the experimental data, as on the experimental side a general consensus has been reached, whereas interpretations and related theoretical models can vary significantly. The first part of the paper introduces photoemission spectroscopy in the context of strongly interacting systems, along with an update on the state-of-the-art instrumentation. The second part provides an overview of the scientific issues relevant to the investigation of the low-energy electronic structure by ARPES. The rest of the paper is devoted to the experimental results from the cuprates, and the discussion is organized along conceptual lines: normal-state electronic structure, interlayer interaction, superconducting gap, coherent superconducting peak, pseudogap, electron self-energy, and collective modes. Within each topic, ARPES data from the various copper oxides are presented.

Ferromagnetic materials

Abstract: In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

Plasmon-induced hot carrier science and technology

Abstract: The discovery of the photoelectric effect by Heinrich Hertz in 1887 set the foundation for over 125 years of hot carrier science and technology. In the early 1900s it played a critical role in the development of quantum mechanics, but even today the unique properties of these energetic, hot carriers offer new and exciting opportunities for fundamental research and applications. Measurement of the kinetic energy and momentum of photoejected hot electrons can provide valuable information on the electronic structure of materials. The heat generated by hot carriers can be harvested to drive a wide range of physical and chemical processes. Their kinetic energy can be used to harvest solar energy or create sensitive photodetectors and spectrometers. Photoejected charges can also be used to electrically dope two-dimensional materials. Plasmon excitations in metallic nanostructures can be engineered to enhance and provide valuable control over the emission of hot carriers. This Review discusses recent advances in the understanding and application of plasmon-induced hot carrier generation and highlights some of the exciting new directions for the field.