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Takashi Koida

Researcher at National Institute of Advanced Industrial Science and Technology

Publications -  113
Citations -  4873

Takashi Koida is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Thin film & Transparent conducting film. The author has an hindex of 32, co-authored 104 publications receiving 4458 citations. Previous affiliations of Takashi Koida include University of Tsukuba & Mitsubishi Heavy Industries.

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MgxZn1−xO as a II–VI widegap semiconductor alloy

TL;DR: In this article, a wide gap II-VI semiconductor alloy, MgxZn1−xO, was proposed for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO.
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Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

TL;DR: In this article, the influence of point defects on the nonradiative processes in ZnO was studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement.
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Hydrogen-doped In2O3 as High-mobility Transparent Conductive Oxide

TL;DR: In this paper, the authors have developed hydrogen-doped In2O3 films on glass with high mobility and high near-infrared transparency by using sputtering process performed at room temperature, followed by post-annealing treatment at 200 °C.
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Ferromagnetism in Co-Doped TiO2 Rutile Thin Films Grown by Laser Molecular Beam Epitaxy

TL;DR: In this article, a Co-doped TiO2 target was used to produce a single phase of rutile film with the concentration of Co between 0 and 5% and the magnetic hysteresis could also be observed even at room temperature with a magnetic moment of 1 µB/Co atom.
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Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach

TL;DR: In this paper, a phase diagram of doped Mott insulators is constructed using a composition spread method for fabricating a film whose doping concentration varies from 0 to 1 continuously, and the concurrent x-ray diffractometer, scanning superconducting quantum interference device microscope and infrared optical spectroscopy are employed for characterizing the film.