Takashi Sato

Bio: Takashi Sato is an academic researcher from Kyoto University. The author has contributed to research in topics: Monte Carlo method & Threshold voltage. The author has an hindex of 22, co-authored 264 publications receiving 2779 citations. Previous affiliations of Takashi Sato include Hitachi & Renesas Electronics.

New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Abstract: A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L/sub eff/, T/sub ok/, V/sub t/, R/sub dsw/ and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18 /spl mu/m and 0.13 /spl mu/m technology nodes with L/sub eff/ down to 70 nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.

A 60-GHz 16QAM/8PSK/QPSK/BPSK Direct-Conversion Transceiver for IEEE802.15.3c

Abstract: This paper presents a 60-GHz direct-conversion transceiver using 60-GHz quadrature oscillators. The transceiver has been fabricated in a standard 65-nm CMOS process. It in cludes a receiver with a 17.3-dB conversion gain and less than 8.0-dB noise figure, a transmitter with a 18.3-dB conversion gain, a 9.5-dBm output 1 dB compression point, a 10.9-dBm saturation output power and 8.8-% power added efficiency. The 60-GHz frequency synthesizer is implemented by a combination of a 20-GHz PLL and a 60-GHz quadrature injection-locked oscillator, which achieves a phase noise of -95 dBc/Hz@l MHz-offset at 60 GHz. The transceiver realizes IEEE802.15.3c full-rate wireless communication for all 16QAM/8PSK/QPSK/BPSK modes, and the communication distances with the full data rate using 2.16-GHz bandwidth, measured with an antenna built in the package, are 2.7-m (BPSK/QPSK) and 0.2-m (8PSK/16QAM). The measured maximum data rates are 8 Gb/s in QPSK mode and 11 Gb/s in 16QAM mode over a 5 cm wireless link within a bit error rate (BER) of <;10-3. The transceiver consumes 186 mW from a 1.2-V supply voltage while transmitting and 106 mW from 1.0-V supply voltage while receiving. Both transmitter and receiver are driven by a 20-GHz PLL, which consumes 66 mW, including output buffer, from a 1.2-V supply voltage.

Full Four-Channel 6.3-Gb/s 60-GHz CMOS Transceiver With Low-Power Analog and Digital Baseband Circuitry

Abstract: This paper presents a 60-GHz direct-conversion RF front-end and baseband transceiver including analog and digital circuitry for PHY functions. The 65-nm CMOS front-end consumes 319 and 223 mW in transmitting and receiving mode, respectively. It is capable of more than 7-Gb/s 16QAM wireless communication for every channel of the 60-GHz standards, which can be extended up to 10 Gb/s. The 40-nm CMOS baseband including analog, digital, and I/O consumes 196 and 427 mW for 16QAM in transmitting and receiving modes, respectively. In the analog baseband, a 5-b 2304-MS/s ADC consumes 12 mW, and a 6-b 3456-MS/s DAC consumes 11 mW. In the digital baseband integrating all PHY functions, a (1440, 1344) LDPC decoder consumes 74 mW with the low energy efficiency of 11.8 pJ/b. The entire system including both RF and BB using a 6-dBi antenna built in the organic package can transmit 3.1 Gb/s over 1.8 m in QPSK and 6.3 Gb/s over 0.05 m in 16QAM.

A Low Phase Noise Quadrature Injection Locked Frequency Synthesizer for MM-Wave Applications

Abstract: This paper proposes a 60 GHz quadrature PLL frequency synthesizer for the IEEE802.15.3c with wide tuning range and low phase noise. The synthesizer is constructed using a 20 GHz PLL that is coupled with a Quadrature Injection Locked Oscillator (QILO) as a frequency tripler to generate the 60 GHz signal. The 20 GHz PLL generates a signal with a phase noise that is lower than -105 dBc/Hz using tail feedback to improve the phase noise while having a 17% tuning range. The proposed 60 GHz QILO uses a combination of parallel and tail injection to enhance the locking range by improving the QILO injection efficiency at the moment of injection and has a 12% tuning range. Both the 20 GHz PLL and the QILO were fabricated as separate chips using a 65 nm CMOS process and measurement results show a phase noise that is less than -95 dBc/Hz@1 MHz at 60 GHz while consuming 80 mW from a 1.2 V supply. To the author's knowledge this phase noise is about 20 dB better than recently reported QPLLs and about 10 dB compared to differential PLLs operating at a similar frequency and at a similar offset.

Compact Modeling of Statistical BTI Under Trapping/Detrapping

Abstract: The aging process due to negative bias temperature instability (NBTI) is a key limiting factor of circuit lifetimes in CMOS design. Recent NBTI data exhibits an excessive amount of randomness and fast recovery, which are difficult to be handled by conventional power-law model (tn). Such discrepancies further pose the challenge on long-term reliability prediction under statistical variations and dynamic voltage scaling (DVS) in real circuit operation. To overcome these barriers, this paper: 1) practically explains the aging statistics due to randomness in number of traps with the log(t) model, accurately predicting the mean and variance shift; 2) proposes cycle-to-cycle model (from the first principles of trapping) to handle aging under multiple supply voltages, predicting the nonmonotonic behavior under DVS; 3) presents a long-term model to estimate a tight upper bound of dynamic aging over multiple cycles; and 4) comprehensively validates the new set of aging models with 65-nm statistical silicon data. Compared with previous models, the new set of aging models capture the aging variability and the essential role of the recovery phase under DVS, reducing unnecessary guard banding during the design stage.

The Design and Analysis of Experiments

Abstract: THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

Fundamentals of Modern VLSI Devices

Abstract: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

Device Requirements for Optical Interconnects to Silicon Chips

Abstract: We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.

Guidelines on the Use of Therapeutic Apheresis in Clinical Practice—Evidence-Based Approach from the Writing Committee of the American Society for Apheresis: The Sixth Special Issue

Abstract: The American Society for Apheresis (ASFA) Journal of Clinical Apheresis (JCA) Special Issue Writing Committee is charged with reviewing, updating, and categorizing indications for the evidence-based use of therapeutic apheresis in human disease. Since the 2007 JCA Special Issue (Fourth Edition), the Committee has incorporated systematic review and evidence-based approaches in the grading and categorization of apheresis indications. This Seventh Edition of the JCA Special Issue continues to maintain this methodology and rigor to make recommendations on the use of apheresis in a wide variety of diseases/conditions. The JCA Seventh Edition, like its predecessor, has consistently applied the category and grading system definitions in the fact sheets. The general layout and concept of a fact sheet that was used since the fourth edition has largely been maintained in this edition. Each fact sheet succinctly summarizes the evidence for the use of therapeutic apheresis in a specific disease entity. The Seventh Edition discusses 87 fact sheets (14 new fact sheets since the Sixth Edition) for therapeutic apheresis diseases and medical conditions, with 179 indications, which are separately graded and categorized within the listed fact sheets. Several diseases that are Category IV which have been described in detail in previous editions and do not have significant new evidence since the last publication are summarized in a separate table. The Seventh Edition of the JCA Special Issue serves as a key resource that guides the utilization of therapeutic apheresis in the treatment of human disease. J. Clin. Apheresis 31:149-162, 2016. © 2016 Wiley Periodicals, Inc.

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.