There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

We review the field of cavity optomechanics, which explores the interaction between electromagnetic radiation and nano- or micromechanical motion This review covers the basics of optical cavities and mechanical resonators, their mutual optomechanical interaction mediated by the radiation pressure force, the large variety of experimental systems which exhibit this interaction, optical measurements of mechanical motion, dynamical backaction amplification and cooling, nonlinear dynamics, multimode optomechanics, and proposals for future cavity quantum optomechanics experiments In addition, we describe the perspectives for fundamental quantum physics and for possible applications of optomechanical devices

Cavity Optomechanics

A fast-Fourier-transform method of topography and interferometry is proposed. By computer processing of a noncontour type of fringe pattern, automatic discrimination is achieved between elevation and depression of the object or wave-front form, which has not been possible by the fringe-contour-generation techniques. The method has advantages over moire topography and conventional fringe-contour interferometry in both accuracy and sensitivity. Unlike fringe-scanning techniques, the method is easy to apply because it uses no moving components.

Fourier-transform method of fringe-pattern analysis for computer-based topography and interferometry

Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

/pdf/silicon-optical-modulators-578o7o6kvr.pdf

Silicon optical modulators

Although high-speed all-optical switches are expected to replace their electrical counterparts in information processing, their relatively large size and power consumption have remained obstacles. We use a combination of an ultrasmall photonic-crystal nanocavity and strong carrier-induced nonlinearity in InGaAsP to successfully demonstrate low-energy switching within a few tens of picoseconds. Switching energies with a contrast of 3 and 10 dB of 0.42 and 0.66 fJ, respectively, have been obtained, which are over two orders of magnitude lower than those of previously reported all-optical switches. The ultrasmall cavity substantially enhances the nonlinearity as well as the recovery speed, and the switching efficiency is maximized by a combination of two-photon absorption and linear absorption in the InGaAsP nanocavities. These switches, with their chip-scale integratability, may lead to the possibility of low-power, high-density, all-optical processing in a chip. All-optical switching energies as small as 0.42 fJ — two orders of magnitude lower than previously reported — are demonstrated in small photonic crystal cavities incorporating InGaAsP. These devices can switch within a few tens of picoseconds, and may therefore have potential for low-power high-density all-optical processing on a chip.

Sub-femtojoule all-optical switching using a photonic-crystal nanocavity

We propose an ultrahigh quality factor (Q) photonic crystal slab nanocavity created by the local width modulation of a line defect. We show numerically that this nanocavity has an intrinsic Q value of up to 7×107. Transmission measurements for fabricated Si photonic-crystal-slab nanocavities directly coupled to input/output waveguides have exhibited a loaded Q value of ∼800000. These theoretical and experimental Q values are very high for photonic crystal nanocavities. In addition, we demonstrate that simply shifting two holes away from a line defect is sufficient to achieve an ultrahigh Q value both theoretically and experimentally.

Ultrahigh-Q photonic crystal nanocavities realized by the local width modulation of a line defect

We have demonstrated all-optical bistable switching operation of resonant-tunnelling devices with ultra-small high-Q Si photonic-crystal nanocavities. Due to their high Q/V ratio, the switching energy is extremely small in comparison with that of conventional devices using the same optical nonlinear mechanism. We also show that they exhibit all-opticaltransistor action by using two resonant modes. These ultrasmall unique nonlinear bistable devices have potentials to function as various signal processing functions in photonic-crystal-based optical-circuits.

Optical bistable switching action of Si high-Q photonic-crystal nanocavities

Coupled optical resonators are one approach to slowing the propagation of light. An array of more than 100 such resonators has now been demonstrated using a photonic crystal. Such a structure can slow light down to below 1% of its speed in a vacuum.

Large-scale arrays of ultrahigh-Q coupled nanocavities

Light is intrinsically very difficult to store in a small space. The ability to trap photons for a long time (photon lifetime, τph) and to slow the propagation of light plays a significant role in quantum information1,2,3 and optical processing4,5,6. Photonic-crystal cavities with an ultrahigh quality factor (Q) are attracting attention7,8 because of their extremely small volume; however, high-Q demonstrations have been accomplished only with spectral measurements9,10,11. Here we describe time-domain measurements on photonic-crystal cavities with the highest Q among wavelength-scale cavities, and show directly that photons are trapped for one nanosecond. These techniques constitute clear and accurate ways of investigating ultrasmall and long τph systems. We also show that optical pulses are delayed for ∼1.45 ns, corresponding to light propagation at ∼2×10−5 c the speed of light in a vacuum, which is the slowest for any dielectric slow-light medium. Furthermore, we succeeded in dynamically changing the Q within the τph, which is key to realizing the dynamic control of light12,13 and photon-trapping memory14.

Takasumi Tanabe

Papers

Sub-femtojoule all-optical switching using a photonic-crystal nanocavity

Ultrahigh-Q photonic crystal nanocavities realized by the local width modulation of a line defect

Optical bistable switching action of Si high-Q photonic-crystal nanocavities

Large-scale arrays of ultrahigh-Q coupled nanocavities

Trapping and delaying photons for one nanosecond in an ultrasmall high-Q photonic-crystal nanocavity