Takayuki Narushima

Bio: Takayuki Narushima is an academic researcher from Tohoku University. The author has contributed to research in topics: Alloy & Titanium. The author has an hindex of 26, co-authored 202 publications receiving 2598 citations. Previous affiliations of Takayuki Narushima include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.

High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide

Abstract: The oxidation behavior of chemically vapor deposited (CVD) SiC at high temperature was investigated using a thermogravimetric technique in the temperatures range of 1823 to 1948 K. The specimens were prepared by chemical vapor deposition using SiCl4, C3H8, and H2 as source gases. The oxidation behavior of the CVD-SiC indicated “passive” oxidation and a two-step parabolic oxidation kinetics over the entire temperature range. The crystallization of the SiO2 film formed may have caused this two-step parabolic behavior. The parabolic oxidation rate constant (Kp) varied with the square root of the oxygen partial pressure (P1/2O2). The activation energy for the oxidation was determined to be 345 and 387 kJ · mol−1. These values suggest that the diffusion process of the oxygen ion which passes through the SiO2 film is rate-controlling.

High-Temperature Oxidation of Silicon Carbide and Silicon Nitride

Abstract: Oxidation behavior of silicon-based ceramics such as SiC and Si 3 N 4 at high temperatures is important for their practical applications to structural or electronic materials. In the present paper two kinds of oxidation (passive and active) and active-to-passive transition of silicon-based ceramics were discussed thermodynamically, and the rate constants of passive/active oxidation and active-to-passive transition oxygen potentials for SiC and Si 3 N 4 were reviewed. Passive and active oxidation behavior depended on the microstructure of oxide films and SiO gas pressure on silicon-based ceramics, respectively. Wagner model, volatility diagram and solgasmix-based calculation were used to estimate the active-to-passive transition.

High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in an Ar─O2 Atmosphere

Abstract: Active oxidation behavior of chemically vapor-deposited silicon carbide in an Ar─O2 atmosphere at 0.1 MPa was examined in the temperature range between 1840 and 1923 K. The transition from active oxidation (mass loss) to passive oxidation (mass gain) was observed at certain distinct oxygen partial pressures (PO2t). The values of PO2t increased with increasing temperature and with decreasing total gas flow rates. This behavior was well explained by Wagner's model and thermodynamic calculations. Active oxidation rates (ka) increased with increasing O2 partial pressures and total gas flow rates. The rate-controlling step of the active oxidation was concluded to be O2 diffusion through the gaseous boundary layer.

High‐Temperature Oxidation of Chemically Vapor‐Deposited Silicon Carbide in Wet Oxygen at 1823 to 1923 K

Abstract: The oxidation of chemically vapor-deposited SiC in wet O2 (water vapor partial pressure = 0.01 MPa, total pressure = 0.1 MPa) was examined using a thermogravimetric technique in the temperature range of 1823 to 1923 K. The oxidation kinetics follow a linear-parabolic relationship over the entire temperature range. The activation energies of linear and parabolic rate constants were 428 and 397 kJ · mol−1, respectively. The results suggested that the rate-controlling step is a chemical reaction at an SiC/SiO2 interface in the linear oxidation regime, and the rate-controlling step is an oxygen diffusion process through the oxide film (cristobalite) in the parabolic oxidation regime.

Silicon Nitride and Related Materials

Abstract: Silicon nitride has been researched intensively, largely in response to the challenge to develop internal combustion engines with hot-zone components made entirely from ceramics. The ceramic engine programs have had only partial success, but this research effort has succeeded in generating a degree of understanding of silicon nitride and of its processing and properties, which in many respects is more advanced than of more widely used technical ceramics. This review examines from the historical standpoint the development of silicon nitride and of its processing into a range of high-grade ceramic materials. The development of understanding of microstructure–property relationships in the silicon nitride materials is also surveyed. Because silicon nitride has close relationships with the SiAlON group of materials, it is impossible to discuss the one without some reference to the other, and a brief mention of the development of the SiAlONs is included for completeness.

Mechanical biocompatibilities of titanium alloys for biomedical applications.

Abstract: Young's modulus as well as tensile strength, ductility, fatigue life, fretting fatigue life, wear properties, functionalities, etc., should be adjusted to levels that are suitable for structural biomaterials used in implants that replace hard tissue. These factors may be collectively referred to as mechanical biocompatibilities. In this paper, the following are described with regard to biomedical applications of titanium alloys: the Young's modulus, wear properties, notch fatigue strength, fatigue behaviour on relation to ageing treatment, improvement of fatigue strength, fatigue crack propagation resistance and ductility by the deformation-induced martensitic transformation of the unstable beta phase, and multifunctional deformation behaviours of titanium alloys.