3.7. Palladium Nanoparticles as Catalysts 888 3.8. Other Transition-Metal Complexes 888 3.9. Transition-Metal-Free Reactions 889 4. Applications 889 4.1. Alkynylation of Arenes 889 4.2. Alkynylation of Heterocycles 891 4.3. Synthesis of Enynes and Enediynes 894 4.4. Synthesis of Ynones 896 4.5. Synthesis of Carbocyclic Systems 897 4.6. Synthesis of Heterocyclic Systems 898 4.7. Synthesis of Natural Products 903 4.8. Synthesis of Electronic and Electrooptical Molecules 906

https://www.chem.ccu.edu.tw/~joyce/referance/ericyang/Chem.%20Rev/Chem.%20Rev.%202007,%20107,%20874-922.pdf

The Sonogashira Reaction: A Booming Methodology in Synthetic Organic Chemistry†

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMs

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories. We classify several possible devices according to their operation principle and critically review the role of the π-conjugated materials in the device operation. We propose specifications for applications for organic nonvolatile memory and review the state of the art with respect to these target specifications. Conclusions are drawn regarding further work on materials and device architectures.

Polymer and Organic Nonvolatile Memory Devices

Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high-k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum...

High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

http://www.nanoscience.gatech.edu/paper/2007/07_OE_1.pdf

High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

An isomeric mixture of a tris(pentafluorobenzyl ester) derivative of hexaazatrinaphthylene forms stable amorphous films with an effective charge-carrier mobility of 0.02 cm2/Vs, while the pure 2,8,15-isomer exhibits widely differing morphologies and carrier mobilities (0.001−0.07 cm2/Vs), depending critically on the processing conditions.

High Charge-Carrier Mobility in an Amorphous Hexaazatrinaphthylene Derivative

We report on a single-layer organic memory device made of poly(N-vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag-NDs). Devices exhibit high ON/OFF switching ratios of 10 4 . This level of performance could be achieved by modifying the ITO electrodes with some Ag-NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low-resistance state can be attributed to Schottky charge tunnelling through low-resistance pathways of Al particles in the polymer layer and that the high-resistance state can be controlled by charge trapping by the Al particles and Ag-NDs.

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

A Fluorine-Substituted Hexakisdecyloxy- hexa-peri-hexabenzocoronene

A comparative study of hole-mobility in N,N′-diphenyl-N,N′-di(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) using three independent measurement techniques is presented. Time-of-flight (TOF), steady-state space charge-limited current (SCLC) experiments are carried-out in neat films of TPD, sandwiched between electrodes with different work functions. Organic field-effect transistors (OFET) are fabricated from TPD thin films and their electrical properties characterized. The comparative results show that all-electrical measurements that involve carrier injection from a metal electrode into the organic film yield effective mobility values that are one order of magnitude lower than those obtained from time-of-flight experiments in which carriers are created in the film optically. Similarly, SCLC and TOF experiments were used to measure electron-mobility in a discoid organic compound 2,3,8,9,14,15-hexakis-dodecylsulfanyl-5,6,11,12,17,18-hexaazatrinaphthylene (HATNA-(SC12H25)6).

Takeshi Kondo

Papers

High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

High Charge-Carrier Mobility in an Amorphous Hexaazatrinaphthylene Derivative

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

A Fluorine-Substituted Hexakisdecyloxy- hexa-peri-hexabenzocoronene

A comparative study of charge mobility measurements in a diamine and in a hexaazatrinaphthylene using different techniques