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Takeshi Ohshima

Researcher at Japan Atomic Energy Agency

Publications -  713
Citations -  15977

Takeshi Ohshima is an academic researcher from Japan Atomic Energy Agency. The author has contributed to research in topics: Irradiation & Vacancy defect. The author has an hindex of 54, co-authored 667 publications receiving 13072 citations. Previous affiliations of Takeshi Ohshima include Japan Atomic Energy Research Institute & Toyohashi University of Technology.

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Quantum error correction in a solid-state hybrid spin register

TL;DR: It is demonstrated that joint initialization, projective readout and fast local and non-local gate operations can all be achieved in diamond spin systems, even under ambient conditions, paving the way to large-scale quantum computation.
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Coherent control of single spins in silicon carbide at room temperature

TL;DR: This study reports the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrates that single spins can be addressed at room temperature and shows coherent control of a single defect spin and finds long spin coherence times under ambient conditions.
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Stimulated emission from nitrogen-vacancy centres in diamond

TL;DR: The results open the possibility of diamond lasers based on NV− centres, tuneable over the phonon sideband, which broadens the applications of NV− magnetometers from single centre nanoscale sensors to a new generation of ultra-precise ensemble laser sensors, which exploit the contrast and signal amplification of a lasing system.
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A room temperature single photon source in silicon carbide

TL;DR: In this article, the first observation of stable single photon sources in an electronic and photonic device-friendly material, silicon carbide (SiC), was reported, which is a viable material for implementing quantum communication, computation and light-emitting diode technologies.
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Carrier concentration dependence of band gap shift in n-type ZnO:Al films

TL;DR: In this article, the band gap shift as a function of carrier concentration in n-type zinc oxide (ZnO) was systematically studied considering the available theoretical models, and the shift in energy gap, evaluated from optical absorption spectra, did not depend on sample preparations; it was mainly related to the carrier concentrations and so intrinsic to AZO.