Dielectric ceramic capacitors, with the advantages of high power density, fast charge-discharge capability, excellent fatigue endurance, and good high temperature stability, have been acknowledged to be promising candidates for solid-state pulse power systems. This review investigates the energy storage performances of linear dielectric, relaxor ferroelectric, and antiferroelectric from the viewpoint of chemical modification, macro/microstructural design, and electrical property optimization. Research progress of ceramic bulks and films for Pb-based and/or Pb-free systems is summarized. Finally, we propose the perspectives on the development of energy storage ceramics for pulse power capacitors in the future.

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Progress and perspectives in dielectric energy storage ceramics

High-entropy enhanced capacitive energy storage

Local Structure Engineered Lead-Free Ferroic Dielectrics for Superior Energy-Storage Capacitors: A Review

Local structure engineered lead-free ferroic dielectrics for superior energy-storage capacitors: A review

Dielectric capacitors, which have the characteristics of greater power density, have received extensive research attention due to their application prospects in pulsed power devices. Film capacitors are easier to integrate into circuits due to their smaller size and higher energy storage density compared to other dielectric capacitor devices. Recently, film capacitors have achieved excellent energy storage performance through a variety of methods and the preparation of multilayer films has become the main way to improve its energy storage performance. In this review, we have summarized several control optimization mechanisms, such as heterojunction effect, interfacial ‘dead-layer’ and space-charges effect, modulating the distribution of electric field and polarization, multilayer film interface design and interface blocking effects, and interlayer coupling, for multilayer films by recalling previous studies on multilayer films. The outlook and future research direction of multilayer films are also discussed in this article.

Multilayer ceramic film capacitors for high-performance energy storage: progress and outlook

Giant energy storage density in lead-free dielectric thin films deposited on Si wafers with an artificial dead-layer

Leakage current characteristics of SrTiO3/LaNiO3/Ba0.67Sr0.33TiO3/SrTiO3 heterostructure thin films

Crystalline Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) thin film was grown on Pt(111)/Ti/SiO2/Si substrate using radio frequency (RF) magnetron sputtering. Based on our best knowledge, there are few reports in the literature to prepare the perovskite BSZT thin films, especially using the RF magnetron sputtering method. The microstructure of the thin films was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and capacitance properties, such as capacitance density, leakage behavior, and the temperature dependence of capacitance were investigated experimentally. The prepared perovskite BSZT film showed a low leakage current density of 7.65 × 10−7 A/cm2 at 60 V, and large breakdown strength of 4 MV/cm. In addition, the prepared BSZT thin film capacitor not only exhibits an almost linear and acceptable change (ΔC/C ~13.6%) of capacitance from room temperature to 180 °C but also a large capacitance density of 1.7 nF/mm2 at 100 kHz, which show great potential for coupling and decoupling applications.

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Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Effect of excess Ca2+ on the formation of CaZrO3 powders via polyacrylamide gel method

The invention provides a method for improving the operating voltage of a dielectric thin film device under a strong electric field. A nano-sized oxide insulation layer is prepared between a dielectricthin film and a metal electrode by a radio frequency magnetron sputtering method to form a metal electrode-oxide insulation layer-dielectric thin film-oxide insulation layer-metal electrode structuredielectric thin film device or form a metal electrode-oxide insulation layer-LaNiO3 transition layer-dielectric thin film-oxide insulation layer-metal electrode structure dielectric thin film device.The oxide of preparing the oxide insulation layer is one of SrTiO3, CaZrO3 and SrZrO3. With application of the method, the oxide insulation layer of nanometer thickness is introduced into the dielectric thin film device, thereby effectively suppressing the increase of the thin film leakage current caused by the charge injection from the metal electrode to the dielectric thin film under the actionof the strong electric field, and improve the operating voltage of the dielectric thin film device under the strong electric field.

Taolan Mo

Papers

Giant energy storage density in lead-free dielectric thin films deposited on Si wafers with an artificial dead-layer

Leakage current characteristics of SrTiO3/LaNiO3/Ba0.67Sr0.33TiO3/SrTiO3 heterostructure thin films

Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Effect of excess Ca2+ on the formation of CaZrO3 powders via polyacrylamide gel method

Method for improving operating voltage of dielectric thin film device under strong electric field